A Novel AC technique for high quality porous GaN
In this paper, we report the formation of porous GaN films under a novel alternatingcurrent (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The ac formed porous GaN with excellent structural and optical properties. Field emission scanning electron microscope (FESE...
| Published in: | International Journal of Electrochemical Science |
|---|---|
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
|
| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84876074044&partnerID=40&md5=aba596c3126191a8de7de61a23e80ab7 |