A Novel AC technique for high quality porous GaN
In this paper, we report the formation of porous GaN films under a novel alternatingcurrent (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The ac formed porous GaN with excellent structural and optical properties. Field emission scanning electron microscope (FESE...
| Published in: | International Journal of Electrochemical Science |
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| Format: | Article |
| Language: | English |
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2013
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84876074044&partnerID=40&md5=aba596c3126191a8de7de61a23e80ab7 |
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2-s2.0-84876074044 |
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2-s2.0-84876074044 Mahmood A.; Ahmed N.M.; Yusof Y.; Kwong Y.F.; Siang C.L.; Abd H.R.; Hassan Z. A Novel AC technique for high quality porous GaN 2013 International Journal of Electrochemical Science 8 4 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84876074044&partnerID=40&md5=aba596c3126191a8de7de61a23e80ab7 In this paper, we report the formation of porous GaN films under a novel alternatingcurrent (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The ac formed porous GaN with excellent structural and optical properties. Field emission scanning electron microscope (FESEM) micrographs indicated that the shapes of the pores are high quality hexagonal like and nano-building structures. The porous layer exhibited a substantial photoluminescence (PL) intensity enhancement with red-shifted band-edge PL peaks associated with the relaxation of compressive stress. The shift of E2(high) to the lower frequency in Raman spectra of the porous GaN films further confirms such a stress relaxation. © 2013 by ESG. 14523981 English Article |
| author |
Mahmood A.; Ahmed N.M.; Yusof Y.; Kwong Y.F.; Siang C.L.; Abd H.R.; Hassan Z. |
| spellingShingle |
Mahmood A.; Ahmed N.M.; Yusof Y.; Kwong Y.F.; Siang C.L.; Abd H.R.; Hassan Z. A Novel AC technique for high quality porous GaN |
| author_facet |
Mahmood A.; Ahmed N.M.; Yusof Y.; Kwong Y.F.; Siang C.L.; Abd H.R.; Hassan Z. |
| author_sort |
Mahmood A.; Ahmed N.M.; Yusof Y.; Kwong Y.F.; Siang C.L.; Abd H.R.; Hassan Z. |
| title |
A Novel AC technique for high quality porous GaN |
| title_short |
A Novel AC technique for high quality porous GaN |
| title_full |
A Novel AC technique for high quality porous GaN |
| title_fullStr |
A Novel AC technique for high quality porous GaN |
| title_full_unstemmed |
A Novel AC technique for high quality porous GaN |
| title_sort |
A Novel AC technique for high quality porous GaN |
| publishDate |
2013 |
| container_title |
International Journal of Electrochemical Science |
| container_volume |
8 |
| container_issue |
4 |
| doi_str_mv |
|
| url |
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84876074044&partnerID=40&md5=aba596c3126191a8de7de61a23e80ab7 |
| description |
In this paper, we report the formation of porous GaN films under a novel alternatingcurrent (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The ac formed porous GaN with excellent structural and optical properties. Field emission scanning electron microscope (FESEM) micrographs indicated that the shapes of the pores are high quality hexagonal like and nano-building structures. The porous layer exhibited a substantial photoluminescence (PL) intensity enhancement with red-shifted band-edge PL peaks associated with the relaxation of compressive stress. The shift of E2(high) to the lower frequency in Raman spectra of the porous GaN films further confirms such a stress relaxation. © 2013 by ESG. |
| publisher |
|
| issn |
14523981 |
| language |
English |
| format |
Article |
| accesstype |
|
| record_format |
scopus |
| collection |
Scopus |
| _version_ |
1809678487634575360 |