Structural and surface studies of undoped porous GaN grown on sapphire

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Structural and surface studies of undoped porous GaN grown on sapphire

Owing to its great potential in optoelectronic devices, structural and surface properties of porous GaN prepared by UV electrochemical etching has been investigated. Scanning electron microscopy (SEM), atomic force microscopy (AFM) and high resolution X-ray diffraction (HRXRD) phi-scan and rocking c...

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Bibliographic Details
Published in:	Advanced Materials Research
Main Author:	Mahmood A.; Hassan Z.; Yusof Y.; Kwong Y.F.; Siang C.L.; Ahmed N.M.
Format:	Conference paper
Language:	English
Published:	2013
Online Access:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-84871917990&doi=10.4028%2fwww.scientific.net%2fAMR.620.45&partnerID=40&md5=258e87a3f6f10750445909b78fc2f376

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