Structural and surface studies of undoped porous GaN grown on sapphire
Owing to its great potential in optoelectronic devices, structural and surface properties of porous GaN prepared by UV electrochemical etching has been investigated. Scanning electron microscopy (SEM), atomic force microscopy (AFM) and high resolution X-ray diffraction (HRXRD) phi-scan and rocking c...
| Published in: | Advanced Materials Research |
|---|---|
| Main Author: | |
| Format: | Conference paper |
| Language: | English |
| Published: |
2013
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84871917990&doi=10.4028%2fwww.scientific.net%2fAMR.620.45&partnerID=40&md5=258e87a3f6f10750445909b78fc2f376 |