Structural and surface studies of undoped porous GaN grown on sapphire

Structural and surface studies of undoped porous GaN grown on sapphire

Owing to its great potential in optoelectronic devices, structural and surface properties of porous GaN prepared by UV electrochemical etching has been investigated. Scanning electron microscopy (SEM), atomic force microscopy (AFM) and high resolution X-ray diffraction (HRXRD) phi-scan and rocking c...

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Published in:Advanced Materials Research
Main Author: Mahmood A.; Hassan Z.; Yusof Y.; Kwong Y.F.; Siang C.L.; Ahmed N.M.
Format: Conference paper
Language:English
Published: 2013
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84871917990&doi=10.4028%2fwww.scientific.net%2fAMR.620.45&partnerID=40&md5=258e87a3f6f10750445909b78fc2f376
id 2-s2.0-84871917990
spelling 2-s2.0-84871917990
Mahmood A.; Hassan Z.; Yusof Y.; Kwong Y.F.; Siang C.L.; Ahmed N.M.
Structural and surface studies of undoped porous GaN grown on sapphire
2013
Advanced Materials Research
620

10.4028/www.scientific.net/AMR.620.45
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84871917990&doi=10.4028%2fwww.scientific.net%2fAMR.620.45&partnerID=40&md5=258e87a3f6f10750445909b78fc2f376
Owing to its great potential in optoelectronic devices, structural and surface properties of porous GaN prepared by UV electrochemical etching has been investigated. Scanning electron microscopy (SEM), atomic force microscopy (AFM) and high resolution X-ray diffraction (HRXRD) phi-scan and rocking curves measurements revealed the nature of the pore morphology and nanostructures. SEM micrograph indicated that the shapes of pores for porous sample are nearly hexagonal. The AFM measurements revealed that the surface roughness increased in the porous sample. X-ray diffraction phi-scan showed that porous GaN sample maintained the epitaxial feature. © (2013) Trans Tech Publications, Switzerland.

10226680
English
Conference paper
author Mahmood A.; Hassan Z.; Yusof Y.; Kwong Y.F.; Siang C.L.; Ahmed N.M.
spellingShingle Mahmood A.; Hassan Z.; Yusof Y.; Kwong Y.F.; Siang C.L.; Ahmed N.M.
Structural and surface studies of undoped porous GaN grown on sapphire
author_facet Mahmood A.; Hassan Z.; Yusof Y.; Kwong Y.F.; Siang C.L.; Ahmed N.M.
author_sort Mahmood A.; Hassan Z.; Yusof Y.; Kwong Y.F.; Siang C.L.; Ahmed N.M.
title Structural and surface studies of undoped porous GaN grown on sapphire
title_short Structural and surface studies of undoped porous GaN grown on sapphire
title_full Structural and surface studies of undoped porous GaN grown on sapphire
title_fullStr Structural and surface studies of undoped porous GaN grown on sapphire
title_full_unstemmed Structural and surface studies of undoped porous GaN grown on sapphire
title_sort Structural and surface studies of undoped porous GaN grown on sapphire
publishDate 2013
container_title Advanced Materials Research
container_volume 620
container_issue
doi_str_mv 10.4028/www.scientific.net/AMR.620.45
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-84871917990&doi=10.4028%2fwww.scientific.net%2fAMR.620.45&partnerID=40&md5=258e87a3f6f10750445909b78fc2f376
description Owing to its great potential in optoelectronic devices, structural and surface properties of porous GaN prepared by UV electrochemical etching has been investigated. Scanning electron microscopy (SEM), atomic force microscopy (AFM) and high resolution X-ray diffraction (HRXRD) phi-scan and rocking curves measurements revealed the nature of the pore morphology and nanostructures. SEM micrograph indicated that the shapes of pores for porous sample are nearly hexagonal. The AFM measurements revealed that the surface roughness increased in the porous sample. X-ray diffraction phi-scan showed that porous GaN sample maintained the epitaxial feature. © (2013) Trans Tech Publications, Switzerland.
publisher
issn 10226680
language English
format Conference paper
accesstype
record_format scopus
collection Scopus
_version_ 1809677688902778880

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