| Summary: | A zinc oxide (ZnO) thin film is fabricated on Si (110) substrate using the radio frequency sputtering technique. The good structural properties of the ZnO thin film on the Si substrate was confirmed via high resolution X-ray diffraction (HRXRD) and by scanning electron microscopy. The photoluminescence (PL) emission study included the optical properties of the ZnO film, and two PL peaks at 371 and 530 nm UV and visible regions were observed. A high oxidation current of 24.6 μM + 1.33 μA was applied at n = 5 of 10 mM H2O on sputtering Si-ZnO at a 0.05V/s scan rate. Glucose oxidase was then immobilized on the ZnO/Si electrode as glucose biosensor, with a limit of detection of 3.33 μM + 1.11 μM (n = 3). Finally, the response current increased linearly with glucose concentration in the range of 500 μM to 2100 μM with a correlation coefficient of 0.998 and a slope of 50 μA μM -1. © 2012 by ESG.
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