Crystalline and structural properties dependence on RF power and deposition temperature of sputtered nanocrystalline silicon thin films on teflon and glass substrates

• Published in: Advanced Materials Research
• Main Author: Mahzan N.H.; Hashim S.B.; Herman S.H.; Rusop M.
• Format: Conference paper
• Language: English
• Published: 2012
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84869385403&doi=10.4028%2fwww.scientific.net%2fAMR.576.475&partnerID=40&md5=46cb8b22aeebb97bf9aa762febe94269

Nanocrystalline silicon (nc-Si) thin films were deposited on glass and polytetrafluoroethylene (PTFE, teflon) substrates using Radio frequency (RF) magnetron sputtering. The effect of RF power and deposition temperature on the physical and structural properties of nc- Si on the glass and Teflon substrate was studied. The thin films properties were examined by Raman spectroscopy and field emission scanning electron microscopy (FESEM). We found that the thickness of thin films increased with increased RF power and deposition temperature. Raman spectroscopy results it showed that, with increasing RF power and deposition temperature can cause the changing of crystallinity on both glass and Teflon substrate. © (2012) Trans Tech Publications, Switzerland.