Room-temperature deposition of silicon thin films by RF magnetron sputtering

Room-temperature deposition of silicon thin films by RF magnetron sputtering

Silicon thin film was successfully deposited on glass substrate using Radio frequency (RF) magnetron sputtering. The effect of deposition pressure on the physical and structural properties of thin films on the glass substrate was studied. The film thickness and deposition rate decreased with decreas...

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Published in:Advanced Materials Research
Main Author: Hashim S.B.; Mahzan N.H.; Herman S.H.; Rusop M.
Format: Conference paper
Language:English
Published: 2012
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84869383615&doi=10.4028%2fwww.scientific.net%2fAMR.576.543&partnerID=40&md5=f821b2fcc1c51c5f4ce96ec1b842f98f
id 2-s2.0-84869383615
spelling 2-s2.0-84869383615
Hashim S.B.; Mahzan N.H.; Herman S.H.; Rusop M.
Room-temperature deposition of silicon thin films by RF magnetron sputtering
2012
Advanced Materials Research
576

10.4028/www.scientific.net/AMR.576.543
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84869383615&doi=10.4028%2fwww.scientific.net%2fAMR.576.543&partnerID=40&md5=f821b2fcc1c51c5f4ce96ec1b842f98f
Silicon thin film was successfully deposited on glass substrate using Radio frequency (RF) magnetron sputtering. The effect of deposition pressure on the physical and structural properties of thin films on the glass substrate was studied. The film thickness and deposition rate decreased with decreasing deposition pressure. Field emission scanning electron microscopy (FESEM) shows as the deposition pressure increased, the surface morphology transform from concise structured to not closely pack on the surface. Raman spectroscopy result showed that the peak was around 508 cm-1, showing that the thin film is nanocrystalline instead of polycrystalline silicon. © (2012) Trans Tech Publications, Switzerland.

10226680
English
Conference paper
author Hashim S.B.; Mahzan N.H.; Herman S.H.; Rusop M.
spellingShingle Hashim S.B.; Mahzan N.H.; Herman S.H.; Rusop M.
Room-temperature deposition of silicon thin films by RF magnetron sputtering
author_facet Hashim S.B.; Mahzan N.H.; Herman S.H.; Rusop M.
author_sort Hashim S.B.; Mahzan N.H.; Herman S.H.; Rusop M.
title Room-temperature deposition of silicon thin films by RF magnetron sputtering
title_short Room-temperature deposition of silicon thin films by RF magnetron sputtering
title_full Room-temperature deposition of silicon thin films by RF magnetron sputtering
title_fullStr Room-temperature deposition of silicon thin films by RF magnetron sputtering
title_full_unstemmed Room-temperature deposition of silicon thin films by RF magnetron sputtering
title_sort Room-temperature deposition of silicon thin films by RF magnetron sputtering
publishDate 2012
container_title Advanced Materials Research
container_volume 576
container_issue
doi_str_mv 10.4028/www.scientific.net/AMR.576.543
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-84869383615&doi=10.4028%2fwww.scientific.net%2fAMR.576.543&partnerID=40&md5=f821b2fcc1c51c5f4ce96ec1b842f98f
description Silicon thin film was successfully deposited on glass substrate using Radio frequency (RF) magnetron sputtering. The effect of deposition pressure on the physical and structural properties of thin films on the glass substrate was studied. The film thickness and deposition rate decreased with decreasing deposition pressure. Field emission scanning electron microscopy (FESEM) shows as the deposition pressure increased, the surface morphology transform from concise structured to not closely pack on the surface. Raman spectroscopy result showed that the peak was around 508 cm-1, showing that the thin film is nanocrystalline instead of polycrystalline silicon. © (2012) Trans Tech Publications, Switzerland.
publisher
issn 10226680
language English
format Conference paper
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record_format scopus
collection Scopus
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