Effects of annealing process on dielectric properties of sol-gel derived lead titanate thin films

• Published in: International Conference on Electronic Devices, Systems, and Applications
• Main Author: Bakar R.A.; Bakar M.S.A.; Rusop M.
• Format: Conference paper
• Language: English
• Published: 2011
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-80055096281&doi=10.1109%2fICEDSA.2011.5959086&partnerID=40&md5=b12f26077ee04548b9dcb44ded62490b

This paper reports on the effects of annealing process on the dielectric properties of lead titanate (PbTiO3) thin films. The thin films have been deposited on silicon substrates using sol-gel spin coating method. The dielectric properties and resistivity of the thin films annealed at different annealing temperatures and times were then investigated using HIOKI 3532-50 LCR meter and four point probe respectively. It was found that the dielectric constant exhibits inverse relationship with dielectric loss and strongly affected by annealing time and temperature. Annealed at 700°C resulted in dielectric constant and loss of 44 and 0.1 respectively. The resistivity of the films was measured to be 1.34104Ωm. © 2011 IEEE.