Study on the effect of metal contact (Pt, Pd and Au) to the electrical and physical properties of MgxZnx-1O thin film for FET applications
Sol-gel method with spin coating technique has been used to deposit the MgxZnx-1O (0.0<x<0.3) thin film. By using silicon as a substrate, this thin film being deposited and being annealed at 550°C in an hour. This is done to investigate the consequences of a different dopant concentration with...
| Published in: | IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE |
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| Main Author: | |
| Format: | Conference paper |
| Language: | English |
| Published: |
2010
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-77957589748&doi=10.1109%2fSMELEC.2010.5549438&partnerID=40&md5=06043207da77627d9eee3da4c039df86 |