Anodization voltage effect on physical properties of anodic TiO2nanotube arrays film

Titanium dioxide (TiO2) material have received attention due to their performance in optoelectronics especially in light emission diode (LED) devices. The TiO2 nanotubes array (NTAs) film was synthesized by electrochemical anodization method at different anodizing voltages at room temperature. The s...

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Bibliographic Details
Published in:AIP Conference Proceedings
Main Authors: Azhar N.E.A.; Munirah S.; Rani R.A.; Shuhaimi A.; Malek M.F.; Mamat M.H.; Shariffudin S.S., Sobihana@uitm.edu.my; Rusop M.
Format: Conference paper
Language:English
Published: American Institute of Physics Inc. 2020
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85098544321&doi=10.1063%2f5.0033167&partnerID=40&md5=d97497fbef4e3ca265545f59d38a9c19
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Summary:Titanium dioxide (TiO2) material have received attention due to their performance in optoelectronics especially in light emission diode (LED) devices. The TiO2 nanotubes array (NTAs) film was synthesized by electrochemical anodization method at different anodizing voltages at room temperature. The surface morphology revealed that sample anodized voltage at 35V showed uniformity with a regular porous on top layer of TiO2. The optical band gap of TiO2 NTAs film shows the decrement of band gap with the increment of anodizing voltage. The current-voltage (I-V) characteristic of TiO2 NTAs film shows the ohmic contact behavior. Non-stoichiometric TiO2 resulted from the oxygen deficiency can be applied to explain the n-type semiconductor behavior. Anodizing voltage at 35V is the highest conductivity and lowest band gap for TiO2 NTAs and suitable used for LED devices. © 2020 Author(s).
ISSN:0094243X
DOI:10.1063/5.0033167