Hexagonal Enhanced Porous GaN with Delayed Integrated Pulse Electrochemical (iPEC) Etching

Hexagonal Enhanced Porous GaN with Delayed Integrated Pulse Electrochemical (iPEC) Etching

This present study investigates the effect of time delay (Td) d ) on the formation of porous GaN (P-GaN) using integrated pulse electrochemical (iPEC) etching. Porous GaN (P-GaN) was formed by etching an N-type GaN wafer with a 4% KOH electrolyte for 60 minutes under an ultraviolet (UV) lamp at a cu...

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Bibliographic Details
Published in:INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS
Main Authors: Razali, Nurul Syuhadah Mohd; Abd Rahim, Alhan Farhanah; Hassan, Nur Sabrina Mohd; Radzali, Rosfariza; Mahmood, Ainorkhilah; Sabki, Syarifah Norfaezah; Hamzah, Irni Hamiza; Idris, Mohaiyedin; Mohamed, Mohamed Fauzi Packeer
Format: Article
Language:English
Published: UNIMAP PRESS 2024
Subjects:
Materials Science
Online Access:https://www-webofscience-com.uitm.idm.oclc.org/wos/woscc/full-record/WOS:001343346700005

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https://www-webofscience-com.uitm.idm.oclc.org/wos/woscc/full-record/WOS:001343346700005

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