Numerical study on the optimisation of AlGaN-based deep ultra-violet light emitting diodes single quantum wells

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Numerical study on the optimisation of AlGaN-based deep ultra-violet light emitting diodes single quantum wells

Solid-state ultra-violet light emitting diodes (UV-LEDs) based on aluminium gallium nitride (AlGaN) semiconductors have drawn considerable attention because their energy can be tuned from 3.4 eV (GaN) to 6.2 eV (AlN) by changing Al content. Subsequently, AlGaN-based UV-LEDs with a full wavelength co...

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Bibliographic Details
Published in:	INTERNATIONAL JOURNAL OF NANOTECHNOLOGY
Main Authors:	Mazwan, M.; Ng, S. S.; Syamsul, M.; Shuhaimi, A.; Pakhuruddin, M. Z.; Rahim, A. F. A.
Format:	Article
Language:	English
Published:	INDERSCIENCE ENTERPRISES LTD 2024
Subjects:	Science & Technology - Other Topics; Materials Science
Online Access:	https://www-webofscience-com.uitm.idm.oclc.org/wos/woscc/full-record/WOS:001327172900003

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