Numerical performance analysis of In0.2Ga0.8N/p-Si based solar cell using PC1D simulation on influence of region thicknesses, doping concentration and temperature towards power conversion efficiency (PCE)

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Numerical performance analysis of In0.2Ga0.8N/p-Si based solar cell using PC1D simulation on influence of region thicknesses, doping concentration and temperature towards power conversion efficiency (PCE)

In this study, the indium gallium nitride (InGaN) with silicon (Si) p-n junction solar cells were optimized to achieve the highest conversion efficiency using PC1D numerical analysis software. Physical models such as Auger recombination with Fermi-Dirac statistics, Shockley-Read-Hall recombination,...

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Bibliographic Details
Published in:	JOURNAL OF OPTICS-INDIA
Main Authors:	Khairuddin, Nur Syahirah; Yusoff, Mohd Zaki Mohd; Hussin, Hanim
Format:	Article; Early Access
Language:	English
Published:	SPRINGER INDIA 2024
Subjects:	Optics
Online Access:	https://www-webofscience-com.uitm.idm.oclc.org/wos/woscc/full-record/WOS:001288076700001

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