A Study on Electrical Performance of SiC-based Self-switching Diode (SSD) as a High Voltage High Power Device
The Self-switching Diodes (SSDs) have been primarily researched and used in low-power device applications for RF detection and harvesting applications. In this paper, we explore the potential of SSDs in high-voltage applications with the usage of Silicon Carbide (SiC) as substrate materials which of...
Published in: | INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS |
---|---|
Main Authors: | Sha'ari, N. Z. A. A.; Zakaria, N. F.; Kasjoo, S. R.; Norizan, M. N.; Mohamad, I. S.; Ahmad, M. F.; Poobalan, B.; Sabani, N.; Rahim, A. F. A. |
Format: | Article |
Language: | English |
Published: |
UNIMAP PRESS
2023
|
Subjects: | |
Online Access: | https://www-webofscience-com.uitm.idm.oclc.org/wos/woscc/full-record/WOS:001141805800016 |
Similar Items
-
A Study on Electrical Performance of SiC-based Self-switching Diode (SSD) as a High Voltage High Power Device
by: Sha’ari N.Z.A.A.; Zakaria N.F.; Kasjoo S.R.; Norizan M.N.; Mohamad I.S.; Ahmad M.F.; Rais S.A.A.; Poobalan B.; Sabani N.; Rahim A.F.A.
Published: (2023) -
Wide Bandgap SiC-Based Oxide Thickness Optimization by Computation and Simulation using Enhanced Electron Mobility with Regulated Gate Voltage Technique for High-Power 4H-SiC MOSFET
by: Poobalan B.; Hashim N.S.; Natarajan M.; Rahim A.F.A.
Published: (2024) -
Wide Bandgap SiC-Based Oxide Thickness Optimization by Computation and Simulation using Enhanced Electron Mobility with Regulated Gate Voltage Technique for High-Power 4H-SiC MOSFET
by: Poobalan, et al.
Published: (2024) -
Mechanical performance of SiC based MEMS capacitive microphone for ultrasonic detection in harsh environment
by: Zawawi S.A.; Hamzah A.A.; Mohd-Yasin F.; Majlis B.Y.
Published: (2017) -
Aperture-coupled frequency-reconfigurable stacked patch microstrip antenna (FRSPMA) integrated with pin diode switch
by: Ramli N.; Ali M.T.; Yusof A.L.; Muhamud-Kayat S.; Alias H.
Published: (2013)