Effect of doping concentration on electrical characteristics of NMOS structure
This project focuses on five different gate lengths; 0.35 μm, 0.25 μm, 0.18 μm, 0.13 μm and 0.09μm. These gate lengths were determined by changing the etch location of polysilicon during the fabrication process of NMOS. The electrical characteristics that investigated were threshold voltage (V th) a...
| 出版年: | AIP Conference Proceedings |
|---|---|
| 第一著者: | |
| フォーマット: | Conference paper |
| 言語: | English |
| 出版事項: |
2009
|
| オンライン･アクセス: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-70450273573&doi=10.1063%2f1.3160210&partnerID=40&md5=68625bc4719b3fd1804966aecf8f8610 |