Effect of doping concentration on electrical characteristics of NMOS structure
This project focuses on five different gate lengths; 0.35 μm, 0.25 μm, 0.18 μm, 0.13 μm and 0.09μm. These gate lengths were determined by changing the etch location of polysilicon during the fabrication process of NMOS. The electrical characteristics that investigated were threshold voltage (V th) a...
| الحاوية / القاعدة: | AIP Conference Proceedings |
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| المؤلف الرئيسي: | |
| التنسيق: | Conference paper |
| اللغة: | English |
| منشور في: |
2009
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| الوصول للمادة أونلاين: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-70450273573&doi=10.1063%2f1.3160210&partnerID=40&md5=68625bc4719b3fd1804966aecf8f8610 |