2-s2.0-70450273573. (2009). Effect of doping concentration on electrical characteristics of NMOS structure. AIP Conference Proceedings, 1136, . https://doi.org/10.1063/1.3160210
Chicago Style (17th ed.) Citation2-s2.0-70450273573. "Effect of Doping Concentration on Electrical Characteristics of NMOS Structure." AIP Conference Proceedings 1136 (2009). https://doi.org/10.1063/1.3160210.
MLA (8th ed.) Citation2-s2.0-70450273573. "Effect of Doping Concentration on Electrical Characteristics of NMOS Structure." AIP Conference Proceedings, vol. 1136, 2009, https://doi.org/10.1063/1.3160210.
Warning: These citations may not always be 100% accurate.