The Effects of NBTI and PBTI on SRAM Characteristics
Negative/Positive Bias Temperature Instability (N / PBTI) is one of the most important readability issues due to aggressive technology scaling. The transistor performance will degrade and eventually reduce the performance of the circuit. As SRAM is a widely used circuit in microprocessors, it is imp...
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Lokman A.; Nasir S.S.B.S.; Hussin H.; Muhamad M.; Reezal N.S.B.; Burham N.; Aziz A.A.; Ezaila N. |
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Lokman A.; Nasir S.S.B.S.; Hussin H.; Muhamad M.; Reezal N.S.B.; Burham N.; Aziz A.A.; Ezaila N. 2-s2.0-85219553137 The Effects of NBTI and PBTI on SRAM Characteristics 2024 2024 IEEE 22nd Student Conference on Research and Development, SCOReD 2024 10.1109/SCOReD64708.2024.10872693 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85219553137&doi=10.1109%2fSCOReD64708.2024.10872693&partnerID=40&md5=0482d91a579eb80a47b7dfd4a34b7bd4 Negative/Positive Bias Temperature Instability (N / PBTI) is one of the most important readability issues due to aggressive technology scaling. The transistor performance will degrade and eventually reduce the performance of the circuit. As SRAM is a widely used circuit in microprocessors, it is important to understand the impact of BTI on the stability of SRAM. In this research, the read and write operation of the SRAM circuit will be evaluated based on the delay and average power, and threshold voltage will be analysed for device-level analysis. The simulation work is conducted by using the HSPICE MOSRA model, and the 16 n m Predictive Technology Model (PTM) is used to design the SRAM. The percentage of average power due to NBTI is higher by 10.36 % as compared to PBTI. The average power due to Nit being higher by 14.5% as compared to the Nit-Not defect mechanism. It can be concluded that the voltage threshold and average power are more affected by NBTI compared to PBTI. © 2024 IEEE. Institute of Electrical and Electronics Engineers Inc. English Conference paper |
author |
2-s2.0-85219553137 |
spellingShingle |
2-s2.0-85219553137 The Effects of NBTI and PBTI on SRAM Characteristics |
author_facet |
2-s2.0-85219553137 |
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2-s2.0-85219553137 |
title |
The Effects of NBTI and PBTI on SRAM Characteristics |
title_short |
The Effects of NBTI and PBTI on SRAM Characteristics |
title_full |
The Effects of NBTI and PBTI on SRAM Characteristics |
title_fullStr |
The Effects of NBTI and PBTI on SRAM Characteristics |
title_full_unstemmed |
The Effects of NBTI and PBTI on SRAM Characteristics |
title_sort |
The Effects of NBTI and PBTI on SRAM Characteristics |
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2024 |
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2024 IEEE 22nd Student Conference on Research and Development, SCOReD 2024 |
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10.1109/SCOReD64708.2024.10872693 |
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https://www.scopus.com/inward/record.uri?eid=2-s2.0-85219553137&doi=10.1109%2fSCOReD64708.2024.10872693&partnerID=40&md5=0482d91a579eb80a47b7dfd4a34b7bd4 |
description |
Negative/Positive Bias Temperature Instability (N / PBTI) is one of the most important readability issues due to aggressive technology scaling. The transistor performance will degrade and eventually reduce the performance of the circuit. As SRAM is a widely used circuit in microprocessors, it is important to understand the impact of BTI on the stability of SRAM. In this research, the read and write operation of the SRAM circuit will be evaluated based on the delay and average power, and threshold voltage will be analysed for device-level analysis. The simulation work is conducted by using the HSPICE MOSRA model, and the 16 n m Predictive Technology Model (PTM) is used to design the SRAM. The percentage of average power due to NBTI is higher by 10.36 % as compared to PBTI. The average power due to Nit being higher by 14.5% as compared to the Nit-Not defect mechanism. It can be concluded that the voltage threshold and average power are more affected by NBTI compared to PBTI. © 2024 IEEE. |
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Institute of Electrical and Electronics Engineers Inc. |
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English |
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Conference paper |
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scopus |
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Scopus |
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1828987861363326976 |