The Effects of NBTI and PBTI on SRAM Characteristics

Negative/Positive Bias Temperature Instability (N / PBTI) is one of the most important readability issues due to aggressive technology scaling. The transistor performance will degrade and eventually reduce the performance of the circuit. As SRAM is a widely used circuit in microprocessors, it is imp...

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發表在:2024 IEEE 22nd Student Conference on Research and Development, SCOReD 2024
主要作者: 2-s2.0-85219553137
格式: Conference paper
語言:English
出版: Institute of Electrical and Electronics Engineers Inc. 2024
在線閱讀:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85219553137&doi=10.1109%2fSCOReD64708.2024.10872693&partnerID=40&md5=0482d91a579eb80a47b7dfd4a34b7bd4
id Lokman A.; Nasir S.S.B.S.; Hussin H.; Muhamad M.; Reezal N.S.B.; Burham N.; Aziz A.A.; Ezaila N.
spelling Lokman A.; Nasir S.S.B.S.; Hussin H.; Muhamad M.; Reezal N.S.B.; Burham N.; Aziz A.A.; Ezaila N.
2-s2.0-85219553137
The Effects of NBTI and PBTI on SRAM Characteristics
2024
2024 IEEE 22nd Student Conference on Research and Development, SCOReD 2024


10.1109/SCOReD64708.2024.10872693
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85219553137&doi=10.1109%2fSCOReD64708.2024.10872693&partnerID=40&md5=0482d91a579eb80a47b7dfd4a34b7bd4
Negative/Positive Bias Temperature Instability (N / PBTI) is one of the most important readability issues due to aggressive technology scaling. The transistor performance will degrade and eventually reduce the performance of the circuit. As SRAM is a widely used circuit in microprocessors, it is important to understand the impact of BTI on the stability of SRAM. In this research, the read and write operation of the SRAM circuit will be evaluated based on the delay and average power, and threshold voltage will be analysed for device-level analysis. The simulation work is conducted by using the HSPICE MOSRA model, and the 16 n m Predictive Technology Model (PTM) is used to design the SRAM. The percentage of average power due to NBTI is higher by 10.36 % as compared to PBTI. The average power due to Nit being higher by 14.5% as compared to the Nit-Not defect mechanism. It can be concluded that the voltage threshold and average power are more affected by NBTI compared to PBTI. © 2024 IEEE.
Institute of Electrical and Electronics Engineers Inc.

English
Conference paper

author 2-s2.0-85219553137
spellingShingle 2-s2.0-85219553137
The Effects of NBTI and PBTI on SRAM Characteristics
author_facet 2-s2.0-85219553137
author_sort 2-s2.0-85219553137
title The Effects of NBTI and PBTI on SRAM Characteristics
title_short The Effects of NBTI and PBTI on SRAM Characteristics
title_full The Effects of NBTI and PBTI on SRAM Characteristics
title_fullStr The Effects of NBTI and PBTI on SRAM Characteristics
title_full_unstemmed The Effects of NBTI and PBTI on SRAM Characteristics
title_sort The Effects of NBTI and PBTI on SRAM Characteristics
publishDate 2024
container_title 2024 IEEE 22nd Student Conference on Research and Development, SCOReD 2024
container_volume
container_issue
doi_str_mv 10.1109/SCOReD64708.2024.10872693
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85219553137&doi=10.1109%2fSCOReD64708.2024.10872693&partnerID=40&md5=0482d91a579eb80a47b7dfd4a34b7bd4
description Negative/Positive Bias Temperature Instability (N / PBTI) is one of the most important readability issues due to aggressive technology scaling. The transistor performance will degrade and eventually reduce the performance of the circuit. As SRAM is a widely used circuit in microprocessors, it is important to understand the impact of BTI on the stability of SRAM. In this research, the read and write operation of the SRAM circuit will be evaluated based on the delay and average power, and threshold voltage will be analysed for device-level analysis. The simulation work is conducted by using the HSPICE MOSRA model, and the 16 n m Predictive Technology Model (PTM) is used to design the SRAM. The percentage of average power due to NBTI is higher by 10.36 % as compared to PBTI. The average power due to Nit being higher by 14.5% as compared to the Nit-Not defect mechanism. It can be concluded that the voltage threshold and average power are more affected by NBTI compared to PBTI. © 2024 IEEE.
publisher Institute of Electrical and Electronics Engineers Inc.
issn
language English
format Conference paper
accesstype
record_format scopus
collection Scopus
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