RF characterization of Mg 0.2Zn 0.8O thin film capacitors for MMIC applications

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RF characterization of Mg 0.2Zn 0.8O thin film capacitors for MMIC applications

Mg 0.2Zn 0.8O thin films are proposed as a new dielectric material for monolithic microwave integrated circuit (MMIC) to replace current dielectric materials due to its high permittivity which can lead to size reduction, in addition to being compatible with semiconductor processing. In this work, Mg...

書目詳細資料
發表在:	2011 IEEE International RF and Microwave Conference, RFM 2011 - Proceedings
主要作者:	2-s2.0-84859984277
格式:	Conference paper
語言:	English
出版:	2011
在線閱讀:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-84859984277&doi=10.1109%2fRFM.2011.6168781&partnerID=40&md5=b8851592d0b65d08ab0154f90adc9010

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