2-s2.0-77955286329. (2010). A simulation based study on C-V characteristics of oxide thickness for NMOS. 2010 International Conference on Electronic Devices, Systems and Applications, ICEDSA 2010 - Proceedings. https://doi.org/10.1109/ICEDSA.2010.5503030
توثيق أسلوب شيكاغو (الطبعة السابعة عشر)2-s2.0-77955286329. "A Simulation Based Study on C-V Characteristics of Oxide Thickness for NMOS." 2010 International Conference on Electronic Devices, Systems and Applications, ICEDSA 2010 - Proceedings 2010. https://doi.org/10.1109/ICEDSA.2010.5503030.
توثيق جمعية اللغة المعاصرة MLA (الطبعة الثامنة)2-s2.0-77955286329. "A Simulation Based Study on C-V Characteristics of Oxide Thickness for NMOS." 2010 International Conference on Electronic Devices, Systems and Applications, ICEDSA 2010 - Proceedings, 2010, https://doi.org/10.1109/ICEDSA.2010.5503030.