Reliability Analysis of Multibridge Channel Field Effect Transistor

Reliability Analysis of Multibridge Channel Field Effect Transistor

In this paper, reliability studies of Positive Bias Temperature Instability (PBTI) characteristics in n-channel MBCFETs and Negative Bias Temperature Instability (NBTI) in p-channel MBCFETs are conducted. Similar to NBTI, PBTI is also a significant reliability issue in transistors. An analytical stu...

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Bibliographic Details
Published in:IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Main Author: Ganlin H.; Alias N.E.; Tan M.L.P.; Hamzah M.N.; Wahab Y.A.; Hussin H.
Format: Conference paper
Language:English
Published: Institute of Electrical and Electronics Engineers Inc. 2024
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85206486240&doi=10.1109%2fICSE62991.2024.10681374&partnerID=40&md5=8512a8f3126cddc94ebbff956e8573c2

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https://www.scopus.com/inward/record.uri?eid=2-s2.0-85206486240&doi=10.1109%2fICSE62991.2024.10681374&partnerID=40&md5=8512a8f3126cddc94ebbff956e8573c2

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