Numerical study on the optimisation of AlGaN-based deep ultra-violet light emitting diodes single quantum wells

Solid-state ultra-violet light emitting diodes (UV-LEDs) based on aluminium gallium nitride (AlGaN) semiconductors have drawn considerable attention because their energy can be tuned from 3.4 eV (GaN) to 6.2 eV (AlN) by changing Al content. Subsequently, AlGaN-based UV-LEDs with a full wavelength co...

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書目詳細資料
發表在:International Journal of Nanotechnology
主要作者: Mazwan M.; Ng S.S.; Syamsul M.; Shuhaimi A.; Pakhuruddin M.Z.; Rahim A.F.A.
格式: Article
語言:English
出版: Inderscience Publishers 2024
在線閱讀:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85206199847&doi=10.1504%2fIJNT.2024.141765&partnerID=40&md5=101fde83fdb285172992e05830d360c5

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