Numerical study on the optimisation of AlGaN-based deep ultra-violet light emitting diodes single quantum wells

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Numerical study on the optimisation of AlGaN-based deep ultra-violet light emitting diodes single quantum wells

Solid-state ultra-violet light emitting diodes (UV-LEDs) based on aluminium gallium nitride (AlGaN) semiconductors have drawn considerable attention because their energy can be tuned from 3.4 eV (GaN) to 6.2 eV (AlN) by changing Al content. Subsequently, AlGaN-based UV-LEDs with a full wavelength co...

وصف كامل

التفاصيل البيبلوغرافية
الحاوية / القاعدة:	International Journal of Nanotechnology
المؤلف الرئيسي:	Mazwan M.; Ng S.S.; Syamsul M.; Shuhaimi A.; Pakhuruddin M.Z.; Rahim A.F.A.
التنسيق:	مقال
اللغة:	English
منشور في:	Inderscience Publishers 2024
الوصول للمادة أونلاين:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85206199847&doi=10.1504%2fIJNT.2024.141765&partnerID=40&md5=101fde83fdb285172992e05830d360c5

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Numerical study on the optimisation of AlGaN-based deep ultra-violet light emitting diodes single quantum wells
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