Enhancing Photocatalysis through TiO2-Doped Al(NO3)3 Thin Films via Sol-Gel Spin Coating

TiO2 as a photocatalyst is receiving considerable interest due to its remarkable photoactivity, chemical stability, and low toxicity. However, the low absorbance of TiO2 has limited its photocatalytic performance. Therefore, in this work, TiO2 doped Al(NO3)3 thin film with different annealing temper...

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Published in:2024 IEEE International Conference on Applied Electronics and Engineering, ICAEE 2024
Main Author: Saad P.S.M.; Shah N.A.M.; Hashim H.; Shariffudin S.S.
Format: Conference paper
Language:English
Published: Institute of Electrical and Electronics Engineers Inc. 2024
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85204779017&doi=10.1109%2fICAEE62924.2024.10667525&partnerID=40&md5=3238f332ac08bb509e0367b76b51e5aa
id 2-s2.0-85204779017
spelling 2-s2.0-85204779017
Saad P.S.M.; Shah N.A.M.; Hashim H.; Shariffudin S.S.
Enhancing Photocatalysis through TiO2-Doped Al(NO3)3 Thin Films via Sol-Gel Spin Coating
2024
2024 IEEE International Conference on Applied Electronics and Engineering, ICAEE 2024


10.1109/ICAEE62924.2024.10667525
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85204779017&doi=10.1109%2fICAEE62924.2024.10667525&partnerID=40&md5=3238f332ac08bb509e0367b76b51e5aa
TiO2 as a photocatalyst is receiving considerable interest due to its remarkable photoactivity, chemical stability, and low toxicity. However, the low absorbance of TiO2 has limited its photocatalytic performance. Therefore, in this work, TiO2 doped Al(NO3)3 thin film with different annealing temperature (300, 350, 400, 450, 500°C) was prepared by sol-gel spin coating method to improve the absorbance was examined. The results reveal the Al(NO3)3 dopant to TiO2 greatly boosts the absorbance with the value attained 0.0908 au. Conversely, the transmittance recorded was 81 T%. These values were obtained at annealing temperature 450°C. It may be due to the creation of an Al-doped TiO2 layer with a more homogeneous and compact structure. Therefore, it can be regarded as a major improvement in the photocatalytic activity of the TiO2 thin film. © 2024 IEEE.
Institute of Electrical and Electronics Engineers Inc.

English
Conference paper

author Saad P.S.M.; Shah N.A.M.; Hashim H.; Shariffudin S.S.
spellingShingle Saad P.S.M.; Shah N.A.M.; Hashim H.; Shariffudin S.S.
Enhancing Photocatalysis through TiO2-Doped Al(NO3)3 Thin Films via Sol-Gel Spin Coating
author_facet Saad P.S.M.; Shah N.A.M.; Hashim H.; Shariffudin S.S.
author_sort Saad P.S.M.; Shah N.A.M.; Hashim H.; Shariffudin S.S.
title Enhancing Photocatalysis through TiO2-Doped Al(NO3)3 Thin Films via Sol-Gel Spin Coating
title_short Enhancing Photocatalysis through TiO2-Doped Al(NO3)3 Thin Films via Sol-Gel Spin Coating
title_full Enhancing Photocatalysis through TiO2-Doped Al(NO3)3 Thin Films via Sol-Gel Spin Coating
title_fullStr Enhancing Photocatalysis through TiO2-Doped Al(NO3)3 Thin Films via Sol-Gel Spin Coating
title_full_unstemmed Enhancing Photocatalysis through TiO2-Doped Al(NO3)3 Thin Films via Sol-Gel Spin Coating
title_sort Enhancing Photocatalysis through TiO2-Doped Al(NO3)3 Thin Films via Sol-Gel Spin Coating
publishDate 2024
container_title 2024 IEEE International Conference on Applied Electronics and Engineering, ICAEE 2024
container_volume
container_issue
doi_str_mv 10.1109/ICAEE62924.2024.10667525
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85204779017&doi=10.1109%2fICAEE62924.2024.10667525&partnerID=40&md5=3238f332ac08bb509e0367b76b51e5aa
description TiO2 as a photocatalyst is receiving considerable interest due to its remarkable photoactivity, chemical stability, and low toxicity. However, the low absorbance of TiO2 has limited its photocatalytic performance. Therefore, in this work, TiO2 doped Al(NO3)3 thin film with different annealing temperature (300, 350, 400, 450, 500°C) was prepared by sol-gel spin coating method to improve the absorbance was examined. The results reveal the Al(NO3)3 dopant to TiO2 greatly boosts the absorbance with the value attained 0.0908 au. Conversely, the transmittance recorded was 81 T%. These values were obtained at annealing temperature 450°C. It may be due to the creation of an Al-doped TiO2 layer with a more homogeneous and compact structure. Therefore, it can be regarded as a major improvement in the photocatalytic activity of the TiO2 thin film. © 2024 IEEE.
publisher Institute of Electrical and Electronics Engineers Inc.
issn
language English
format Conference paper
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record_format scopus
collection Scopus
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