| Summary: | TiO2 as a photocatalyst is receiving considerable interest due to its remarkable photoactivity, chemical stability, and low toxicity. However, the low absorbance of TiO2 has limited its photocatalytic performance. Therefore, in this work, TiO2 doped Al(NO3)3 thin film with different annealing temperature (300, 350, 400, 450, 500°C) was prepared by sol-gel spin coating method to improve the absorbance was examined. The results reveal the Al(NO3)3 dopant to TiO2 greatly boosts the absorbance with the value attained 0.0908 au. Conversely, the transmittance recorded was 81 T%. These values were obtained at annealing temperature 450°C. It may be due to the creation of an Al-doped TiO2 layer with a more homogeneous and compact structure. Therefore, it can be regarded as a major improvement in the photocatalytic activity of the TiO2 thin film. © 2024 IEEE.
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