Understanding the Extended-gate FET pH Sensor Sensing Mechanism through Equivalent Circuit Simulation in LTSpice
This paper presented the design and simulation of an electrochemical equivalent circuit for a pH sensor based on an extended-gate field-effect transistor (EGFET). The pH sensor is critical to many domains, including industrial operations, environmental monitoring, and biomedical applications. To exa...
Published in: | 2024 IEEE International Conference on Automatic Control and Intelligent Systems, I2CACIS 2024 - Proceedings |
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Institute of Electrical and Electronics Engineers Inc.
2024
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2-s2.0-85203789142 Hashim S.B.; Aqilah Azlan N.; Mahzan N.H.; Zulkifli Z.; Zulkefle M.A.; Hana Herman S. Understanding the Extended-gate FET pH Sensor Sensing Mechanism through Equivalent Circuit Simulation in LTSpice 2024 2024 IEEE International Conference on Automatic Control and Intelligent Systems, I2CACIS 2024 - Proceedings 10.1109/I2CACIS61270.2024.10649831 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85203789142&doi=10.1109%2fI2CACIS61270.2024.10649831&partnerID=40&md5=e1607783da2a2ce17d409c201cd1ba45 This paper presented the design and simulation of an electrochemical equivalent circuit for a pH sensor based on an extended-gate field-effect transistor (EGFET). The pH sensor is critical to many domains, including industrial operations, environmental monitoring, and biomedical applications. To examine the equivalent circuits used in an EGFET sensor for pH measurement, specifically focusing on an electrochemical sensing response and further comprehend the EGFET sensor's sensing mechanism, multiple equivalent circuits were built using resistors and capacitors at the FET's gate to replicate the sensing electrode (SE), reference electrode (RE), and pH solution. The circuit configurations and discrete component values were then changed and simulated with the LTSpice XVII program in order to examine and understand the behavior of the sensing reaction. The circuit configurations were considered the sensor's input, and changes in the metal oxide semiconductor field effect transistor (MOSFET) drain current (ID) corresponding to the various circuit configurations and component values were recorded and examined. It was discovered that the capacitor(s) linked directly to the MOSFET gate are the primary factor that affects ID, whereas resistors did not affect ID. This observation provides empirical evidence supporting the hypothesized electrochemical events taking place on the surface of the SE, hence elucidating the significance of ionic exchange. Ions play a role in the capacitor mechanism, which is associated with charges. © 2024 IEEE. Institute of Electrical and Electronics Engineers Inc. English Conference paper |
author |
Hashim S.B.; Aqilah Azlan N.; Mahzan N.H.; Zulkifli Z.; Zulkefle M.A.; Hana Herman S. |
spellingShingle |
Hashim S.B.; Aqilah Azlan N.; Mahzan N.H.; Zulkifli Z.; Zulkefle M.A.; Hana Herman S. Understanding the Extended-gate FET pH Sensor Sensing Mechanism through Equivalent Circuit Simulation in LTSpice |
author_facet |
Hashim S.B.; Aqilah Azlan N.; Mahzan N.H.; Zulkifli Z.; Zulkefle M.A.; Hana Herman S. |
author_sort |
Hashim S.B.; Aqilah Azlan N.; Mahzan N.H.; Zulkifli Z.; Zulkefle M.A.; Hana Herman S. |
title |
Understanding the Extended-gate FET pH Sensor Sensing Mechanism through Equivalent Circuit Simulation in LTSpice |
title_short |
Understanding the Extended-gate FET pH Sensor Sensing Mechanism through Equivalent Circuit Simulation in LTSpice |
title_full |
Understanding the Extended-gate FET pH Sensor Sensing Mechanism through Equivalent Circuit Simulation in LTSpice |
title_fullStr |
Understanding the Extended-gate FET pH Sensor Sensing Mechanism through Equivalent Circuit Simulation in LTSpice |
title_full_unstemmed |
Understanding the Extended-gate FET pH Sensor Sensing Mechanism through Equivalent Circuit Simulation in LTSpice |
title_sort |
Understanding the Extended-gate FET pH Sensor Sensing Mechanism through Equivalent Circuit Simulation in LTSpice |
publishDate |
2024 |
container_title |
2024 IEEE International Conference on Automatic Control and Intelligent Systems, I2CACIS 2024 - Proceedings |
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container_issue |
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doi_str_mv |
10.1109/I2CACIS61270.2024.10649831 |
url |
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85203789142&doi=10.1109%2fI2CACIS61270.2024.10649831&partnerID=40&md5=e1607783da2a2ce17d409c201cd1ba45 |
description |
This paper presented the design and simulation of an electrochemical equivalent circuit for a pH sensor based on an extended-gate field-effect transistor (EGFET). The pH sensor is critical to many domains, including industrial operations, environmental monitoring, and biomedical applications. To examine the equivalent circuits used in an EGFET sensor for pH measurement, specifically focusing on an electrochemical sensing response and further comprehend the EGFET sensor's sensing mechanism, multiple equivalent circuits were built using resistors and capacitors at the FET's gate to replicate the sensing electrode (SE), reference electrode (RE), and pH solution. The circuit configurations and discrete component values were then changed and simulated with the LTSpice XVII program in order to examine and understand the behavior of the sensing reaction. The circuit configurations were considered the sensor's input, and changes in the metal oxide semiconductor field effect transistor (MOSFET) drain current (ID) corresponding to the various circuit configurations and component values were recorded and examined. It was discovered that the capacitor(s) linked directly to the MOSFET gate are the primary factor that affects ID, whereas resistors did not affect ID. This observation provides empirical evidence supporting the hypothesized electrochemical events taking place on the surface of the SE, hence elucidating the significance of ionic exchange. Ions play a role in the capacitor mechanism, which is associated with charges. © 2024 IEEE. |
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Institute of Electrical and Electronics Engineers Inc. |
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English |
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Conference paper |
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scopus |
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Scopus |
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1814778502740705280 |