Understanding the Extended-gate FET pH Sensor Sensing Mechanism through Equivalent Circuit Simulation in LTSpice

This paper presented the design and simulation of an electrochemical equivalent circuit for a pH sensor based on an extended-gate field-effect transistor (EGFET). The pH sensor is critical to many domains, including industrial operations, environmental monitoring, and biomedical applications. To exa...

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Published in:2024 IEEE International Conference on Automatic Control and Intelligent Systems, I2CACIS 2024 - Proceedings
Main Author: Hashim S.B.; Aqilah Azlan N.; Mahzan N.H.; Zulkifli Z.; Zulkefle M.A.; Hana Herman S.
Format: Conference paper
Language:English
Published: Institute of Electrical and Electronics Engineers Inc. 2024
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85203789142&doi=10.1109%2fI2CACIS61270.2024.10649831&partnerID=40&md5=e1607783da2a2ce17d409c201cd1ba45
id 2-s2.0-85203789142
spelling 2-s2.0-85203789142
Hashim S.B.; Aqilah Azlan N.; Mahzan N.H.; Zulkifli Z.; Zulkefle M.A.; Hana Herman S.
Understanding the Extended-gate FET pH Sensor Sensing Mechanism through Equivalent Circuit Simulation in LTSpice
2024
2024 IEEE International Conference on Automatic Control and Intelligent Systems, I2CACIS 2024 - Proceedings


10.1109/I2CACIS61270.2024.10649831
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85203789142&doi=10.1109%2fI2CACIS61270.2024.10649831&partnerID=40&md5=e1607783da2a2ce17d409c201cd1ba45
This paper presented the design and simulation of an electrochemical equivalent circuit for a pH sensor based on an extended-gate field-effect transistor (EGFET). The pH sensor is critical to many domains, including industrial operations, environmental monitoring, and biomedical applications. To examine the equivalent circuits used in an EGFET sensor for pH measurement, specifically focusing on an electrochemical sensing response and further comprehend the EGFET sensor's sensing mechanism, multiple equivalent circuits were built using resistors and capacitors at the FET's gate to replicate the sensing electrode (SE), reference electrode (RE), and pH solution. The circuit configurations and discrete component values were then changed and simulated with the LTSpice XVII program in order to examine and understand the behavior of the sensing reaction. The circuit configurations were considered the sensor's input, and changes in the metal oxide semiconductor field effect transistor (MOSFET) drain current (ID) corresponding to the various circuit configurations and component values were recorded and examined. It was discovered that the capacitor(s) linked directly to the MOSFET gate are the primary factor that affects ID, whereas resistors did not affect ID. This observation provides empirical evidence supporting the hypothesized electrochemical events taking place on the surface of the SE, hence elucidating the significance of ionic exchange. Ions play a role in the capacitor mechanism, which is associated with charges. © 2024 IEEE.
Institute of Electrical and Electronics Engineers Inc.

English
Conference paper

author Hashim S.B.; Aqilah Azlan N.; Mahzan N.H.; Zulkifli Z.; Zulkefle M.A.; Hana Herman S.
spellingShingle Hashim S.B.; Aqilah Azlan N.; Mahzan N.H.; Zulkifli Z.; Zulkefle M.A.; Hana Herman S.
Understanding the Extended-gate FET pH Sensor Sensing Mechanism through Equivalent Circuit Simulation in LTSpice
author_facet Hashim S.B.; Aqilah Azlan N.; Mahzan N.H.; Zulkifli Z.; Zulkefle M.A.; Hana Herman S.
author_sort Hashim S.B.; Aqilah Azlan N.; Mahzan N.H.; Zulkifli Z.; Zulkefle M.A.; Hana Herman S.
title Understanding the Extended-gate FET pH Sensor Sensing Mechanism through Equivalent Circuit Simulation in LTSpice
title_short Understanding the Extended-gate FET pH Sensor Sensing Mechanism through Equivalent Circuit Simulation in LTSpice
title_full Understanding the Extended-gate FET pH Sensor Sensing Mechanism through Equivalent Circuit Simulation in LTSpice
title_fullStr Understanding the Extended-gate FET pH Sensor Sensing Mechanism through Equivalent Circuit Simulation in LTSpice
title_full_unstemmed Understanding the Extended-gate FET pH Sensor Sensing Mechanism through Equivalent Circuit Simulation in LTSpice
title_sort Understanding the Extended-gate FET pH Sensor Sensing Mechanism through Equivalent Circuit Simulation in LTSpice
publishDate 2024
container_title 2024 IEEE International Conference on Automatic Control and Intelligent Systems, I2CACIS 2024 - Proceedings
container_volume
container_issue
doi_str_mv 10.1109/I2CACIS61270.2024.10649831
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85203789142&doi=10.1109%2fI2CACIS61270.2024.10649831&partnerID=40&md5=e1607783da2a2ce17d409c201cd1ba45
description This paper presented the design and simulation of an electrochemical equivalent circuit for a pH sensor based on an extended-gate field-effect transistor (EGFET). The pH sensor is critical to many domains, including industrial operations, environmental monitoring, and biomedical applications. To examine the equivalent circuits used in an EGFET sensor for pH measurement, specifically focusing on an electrochemical sensing response and further comprehend the EGFET sensor's sensing mechanism, multiple equivalent circuits were built using resistors and capacitors at the FET's gate to replicate the sensing electrode (SE), reference electrode (RE), and pH solution. The circuit configurations and discrete component values were then changed and simulated with the LTSpice XVII program in order to examine and understand the behavior of the sensing reaction. The circuit configurations were considered the sensor's input, and changes in the metal oxide semiconductor field effect transistor (MOSFET) drain current (ID) corresponding to the various circuit configurations and component values were recorded and examined. It was discovered that the capacitor(s) linked directly to the MOSFET gate are the primary factor that affects ID, whereas resistors did not affect ID. This observation provides empirical evidence supporting the hypothesized electrochemical events taking place on the surface of the SE, hence elucidating the significance of ionic exchange. Ions play a role in the capacitor mechanism, which is associated with charges. © 2024 IEEE.
publisher Institute of Electrical and Electronics Engineers Inc.
issn
language English
format Conference paper
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