Simulation and analysis of solar cells based on InN/p-Si: influence on thickness, doping concentration, and temperature dependence

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Simulation and analysis of solar cells based on InN/p-Si: influence on thickness, doping concentration, and temperature dependence

The current research project intends to enhance solar cells' power and conversion efficiency based on InN/p-Si utilizing the PC1D simulator. A broad direct bandgap of Indium nitride (0.65 eV) makes it suitable for various applications. The InN-based solar cells show an excellent candidate for g...

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Bibliographic Details
Published in:	International Journal of Nanoelectronics and Materials
Main Authors:	Khairuddin N.S.; Yusoff M.Z.M.; Hussin H.; Artes R.G., Jr.
Format:	Article
Language:	English
Published:	Universiti Malaysia Perlis 2024
Online Access:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85202913816&doi=10.58915%2fijneam.v17i3.1164&partnerID=40&md5=8cc4439277f34adf065d90ef31274b23

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