Wide Bandgap SiC-Based Oxide Thickness Optimization by Computation and Simulation using Enhanced Electron Mobility with Regulated Gate Voltage Technique for High-Power 4H-SiC MOSFET
This work analyzed the interactions between gate oxide thickness (Tox), voltage dependence, and electron mobility (E-mobility) in the inversion layer, which controls the electron movement properties of 4H-SiC/SiO2. This paper also presents a calculation of gate oxide thickness in correlation with ga...
| Published in: | Journal of Engineering and Technological Sciences |
|---|---|
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Institute for Research and Community Services, Institut Teknologi Bandung
2024
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85199607441&doi=10.5614%2fj.eng.technol.sci.2024.56.3.5&partnerID=40&md5=ae486bac9737f7f4dcdc35f0dd8d700e |