| Summary: | MIS structures utilizing tunneling AlN on high resistivity silicon is superior in terms of fabrication simplicity and improved bias responses in addition to providing promising electrical and photovoltaic performances. Based on previous simulation work, tunneling behavior is absent from the AlN-based MIS photovoltaic properties, indicating inconsistencies with the experimental evidence. This work aims to highlight this inconsistency by providing a comparative analysis between AlN and other insulating materials such as SiO2, Si3N4 and Al2O3 in terms of the dark current, photocurrent and K ratio parameters. Results show that the absence of tunneling is still prominent in AlN, whilst the other insulating materials illustrate excellent electrical and photovoltaic properties evident by the high K ratio values ranging between 103 and 105. This could be due to the misrepresentation of AlN in the simulation tool, which requires further parametric adjustments. © The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2024.
|
|---|