Analytical Modeling of Depletion-Mode MOSHEMT Device for High- Temperature Applications

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Analytical Modeling of Depletion-Mode MOSHEMT Device for High- Temperature Applications

An analytical model for depletion-mode MOSHEMTs for high-temperature applications is compared against the experimental GaN HEMT data of the AlGaN/GaN MOSHEMT for temperature dependence of 2DEG simulated at 75 °C and 125 °C. Both temperatures reduce the 2DEG density by 4 %in the GaN HEMT and 3 %in th...

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Bibliographic Details
Published in:	IEEE Access
Main Author:	Islam N.; Packeer Mohamed M.F.; Ahmad N.; Isa M.M.; Rahim A.F.A.; Ahmeda K.
Format:	Article
Language:	English
Published:	Institute of Electrical and Electronics Engineers Inc. 2024
Online Access:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85187373632&doi=10.1109%2fACCESS.2024.3373790&partnerID=40&md5=0ca109ee042cb4a09c63fe68e8e1d6fb

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