Analytical Modeling of Depletion-Mode MOSHEMT Device for High- Temperature Applications
An analytical model for depletion-mode MOSHEMTs for high-temperature applications is compared against the experimental GaN HEMT data of the AlGaN/GaN MOSHEMT for temperature dependence of 2DEG simulated at 75 °C and 125 °C. Both temperatures reduce the 2DEG density by 4 %in the GaN HEMT and 3 %in th...
| Published in: | IEEE Access |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2024
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85187373632&doi=10.1109%2fACCESS.2024.3373790&partnerID=40&md5=0ca109ee042cb4a09c63fe68e8e1d6fb |