Fabrication of Uniform Aluminium Nitrate Thin Film on 2-inch Silicon Substrate

Fabrication of Uniform Aluminium Nitrate Thin Film on 2-inch Silicon Substrate

Aluminium nitrate (AlN) has attracted numerous interests among researchers due to its unique properties in the semiconductor material and other high-performance devices. Investigating the uniformity of AlN thin film is one of the most challenge tasks. In this study, AlN thin films successfully depos...

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Published in:2023 IEEE International Conference on Sensors and Nanotechnology, SENNANO 2023
Main Author: Abdullah S.A.B.; Abd Aziz N.S.B.; Mamat M.H.; Azman Z.; Sahari N.; Mohamed A.N.; Wijaya Y.P.; Nayan N.
Format: Conference paper
Language:English
Published: Institute of Electrical and Electronics Engineers Inc. 2023
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85182744279&doi=10.1109%2fSENNANO57767.2023.10352573&partnerID=40&md5=6621bc0eeeb115a413f2f50358f5a0d7
id 2-s2.0-85182744279
spelling 2-s2.0-85182744279
Abdullah S.A.B.; Abd Aziz N.S.B.; Mamat M.H.; Azman Z.; Sahari N.; Mohamed A.N.; Wijaya Y.P.; Nayan N.
Fabrication of Uniform Aluminium Nitrate Thin Film on 2-inch Silicon Substrate
2023
2023 IEEE International Conference on Sensors and Nanotechnology, SENNANO 2023


10.1109/SENNANO57767.2023.10352573
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85182744279&doi=10.1109%2fSENNANO57767.2023.10352573&partnerID=40&md5=6621bc0eeeb115a413f2f50358f5a0d7
Aluminium nitrate (AlN) has attracted numerous interests among researchers due to its unique properties in the semiconductor material and other high-performance devices. Investigating the uniformity of AlN thin film is one of the most challenge tasks. In this study, AlN thin films successfully deposited on a 2-inch of silicon substrate by using the magnetron sputtering technique. The uniformity analysis has been done by various characterization method such as XRD, AFM, surface profiler and FESEM. After depositing AlN thin film into 2-inch Si wafer, the thickness measure at 4 spot shows inconsistency and not reach expected uniformity, however the value at center d is the nearest to reach uniformity due to lowest value for average surface roughness, highest thickness value and acceptable value of crystallinity. © 2023 IEEE.
Institute of Electrical and Electronics Engineers Inc.

English
Conference paper
author Abdullah S.A.B.; Abd Aziz N.S.B.; Mamat M.H.; Azman Z.; Sahari N.; Mohamed A.N.; Wijaya Y.P.; Nayan N.
spellingShingle Abdullah S.A.B.; Abd Aziz N.S.B.; Mamat M.H.; Azman Z.; Sahari N.; Mohamed A.N.; Wijaya Y.P.; Nayan N.
Fabrication of Uniform Aluminium Nitrate Thin Film on 2-inch Silicon Substrate
author_facet Abdullah S.A.B.; Abd Aziz N.S.B.; Mamat M.H.; Azman Z.; Sahari N.; Mohamed A.N.; Wijaya Y.P.; Nayan N.
author_sort Abdullah S.A.B.; Abd Aziz N.S.B.; Mamat M.H.; Azman Z.; Sahari N.; Mohamed A.N.; Wijaya Y.P.; Nayan N.
title Fabrication of Uniform Aluminium Nitrate Thin Film on 2-inch Silicon Substrate
title_short Fabrication of Uniform Aluminium Nitrate Thin Film on 2-inch Silicon Substrate
title_full Fabrication of Uniform Aluminium Nitrate Thin Film on 2-inch Silicon Substrate
title_fullStr Fabrication of Uniform Aluminium Nitrate Thin Film on 2-inch Silicon Substrate
title_full_unstemmed Fabrication of Uniform Aluminium Nitrate Thin Film on 2-inch Silicon Substrate
title_sort Fabrication of Uniform Aluminium Nitrate Thin Film on 2-inch Silicon Substrate
publishDate 2023
container_title 2023 IEEE International Conference on Sensors and Nanotechnology, SENNANO 2023
container_volume
container_issue
doi_str_mv 10.1109/SENNANO57767.2023.10352573
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85182744279&doi=10.1109%2fSENNANO57767.2023.10352573&partnerID=40&md5=6621bc0eeeb115a413f2f50358f5a0d7
description Aluminium nitrate (AlN) has attracted numerous interests among researchers due to its unique properties in the semiconductor material and other high-performance devices. Investigating the uniformity of AlN thin film is one of the most challenge tasks. In this study, AlN thin films successfully deposited on a 2-inch of silicon substrate by using the magnetron sputtering technique. The uniformity analysis has been done by various characterization method such as XRD, AFM, surface profiler and FESEM. After depositing AlN thin film into 2-inch Si wafer, the thickness measure at 4 spot shows inconsistency and not reach expected uniformity, however the value at center d is the nearest to reach uniformity due to lowest value for average surface roughness, highest thickness value and acceptable value of crystallinity. © 2023 IEEE.
publisher Institute of Electrical and Electronics Engineers Inc.
issn
language English
format Conference paper
accesstype
record_format scopus
collection Scopus
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