Simulation on the Effect of Channel Thickness on the Performance of Multi-Bridge Channel Field-Effect Transistor

• Published in: Journal of Physics: Conference Series
• Main Author: Xin T.M.; Sultan S.M.; Hussin H.
• Format: Conference paper
• Language: English
• Published: Institute of Physics 2023
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85182272852&doi=10.1088%2f1742-6596%2f2622%2f1%2f012024&partnerID=40&md5=a370648880c3975f8421f233a4fd8008

A Multi-Bridge Channel Field- Effect Transistor (MBCFET) structure has been designed and simulated to characterize its electrical performance. An MBCFET is a device designed to bridge single-channel FETs, allowing more flexibility with signal routing and power management in complex designs. However, MBCFET suffers from Short Channel Effects which degrade its performance. Channel thickness is another important parameter that affect the performance of MBCFETs. Thus, the impact of channel thickness variation on MBCFET performance is investigated in this project. The electrical characteristic of MBCFET such as its threshold voltage (Vth), subthreshold swing (SS), on-state current (Ion), and off-state current (Ioff) were obtained and analyzed by using the TCAD simulation tool. Comparing the simulation results to published results indicated that the difference between the results was less than 5% for various parameters. The second part of the simulation work shows that as the channel thickness of an MBCFET increases, Vth decreases, Ion increases, and SS decreases. However, when the channel thickness is too thin, SS increases significantly, which leads to the device consuming higher power with lower performance. © 2023 Institute of Physics Publishing. All rights reserved.