Impact of Nanowire Radius and Channel Thickness with High-k Gate Dielectric in GAA-JLT
As the transistor’s size becomes smaller, degradation in the short-channel effects (SCEs) becomes more apparent. This leads to research work on multi-gate transistors such as the Fin-Field Effect Transistor (FinFET) and Gate-All-Around (GAA) transistor, where the 3D architecture have been shown to h...
| Published in: | International Journal of Nanoelectronics and Materials |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Universiti Malaysia Perlis
2023
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85181701764&doi=10.58915%2fijneam.v16iDECEMBER.413&partnerID=40&md5=d1351338f59e7e5a5479015d9bb92334 |