Investigation on Sensitivity Amplification Factor of DGFET Electrochemical Sensors for pH Detection
There has been an increasing interest in the development of chemical and biological FET-based sensors due to their remarkable benefits in label-free detection that has been commonly used in both pH and DNA sensing respectively. In this work, recent Double-Gated Field Effect Transistor (DGFET) as tra...
Published in: | International Journal of Nanoelectronics and Materials |
---|---|
Main Author: | |
Format: | Article |
Language: | English |
Published: |
Universiti Malaysia Perlis
2023
|
Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85181674493&doi=10.58915%2fijneam.v16iDECEMBER.404&partnerID=40&md5=dfbc13310d523da694a3ded32ab938cf |
id |
2-s2.0-85181674493 |
---|---|
spelling |
2-s2.0-85181674493 Hussin H.; Wahab Y.A.; Soin N.; Muhamad M. Investigation on Sensitivity Amplification Factor of DGFET Electrochemical Sensors for pH Detection 2023 International Journal of Nanoelectronics and Materials 16 Special Issue 10.58915/ijneam.v16iDECEMBER.404 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85181674493&doi=10.58915%2fijneam.v16iDECEMBER.404&partnerID=40&md5=dfbc13310d523da694a3ded32ab938cf There has been an increasing interest in the development of chemical and biological FET-based sensors due to their remarkable benefits in label-free detection that has been commonly used in both pH and DNA sensing respectively. In this work, recent Double-Gated Field Effect Transistor (DGFET) as transducers is investigated to understand the super-Nernstian response by amplifying the sensitivity capability in back-gate operations. The BioSensorLab tool was employed to evaluate pH-sensitivity amplification by studying the electrolyte screening and conduction modulation mechanisms which modeled by using Poisson-Boltzmann and Drift-Diffusion equations. The pH sensitivity amplification factors were investigated based on different geometrical configurations of DGFET devices, biasing conditions, and top oxide-electrolyte interfaces. pH sensitivity beyond Nernst limit was observed and increased linearly with the back oxide thickness of the DGFETs. DGFET with a sensitivity of 32.1 mV/pH operated through front-gate operation can be amplified to 195.4 mv/pH through the back-gate operation with a drain voltage of 0.5 V when the back gate oxide thickness increased to 150 nm. Higher pH-sensitivity responses of more than 200 mV/pH were observed where Al2O3 and Ta2O5 are used for the top oxide-electrolyte. It can be concluded that pH sensing of back gate operation ensures the DGFET transducers operated beyond the Nernst limit. © 2023, Universiti Malaysia Perlis. All rights reserved. Universiti Malaysia Perlis 19855761 English Article All Open Access; Hybrid Gold Open Access |
author |
Hussin H.; Wahab Y.A.; Soin N.; Muhamad M. |
spellingShingle |
Hussin H.; Wahab Y.A.; Soin N.; Muhamad M. Investigation on Sensitivity Amplification Factor of DGFET Electrochemical Sensors for pH Detection |
author_facet |
Hussin H.; Wahab Y.A.; Soin N.; Muhamad M. |
author_sort |
Hussin H.; Wahab Y.A.; Soin N.; Muhamad M. |
title |
Investigation on Sensitivity Amplification Factor of DGFET Electrochemical Sensors for pH Detection |
title_short |
Investigation on Sensitivity Amplification Factor of DGFET Electrochemical Sensors for pH Detection |
title_full |
Investigation on Sensitivity Amplification Factor of DGFET Electrochemical Sensors for pH Detection |
title_fullStr |
Investigation on Sensitivity Amplification Factor of DGFET Electrochemical Sensors for pH Detection |
title_full_unstemmed |
Investigation on Sensitivity Amplification Factor of DGFET Electrochemical Sensors for pH Detection |
title_sort |
Investigation on Sensitivity Amplification Factor of DGFET Electrochemical Sensors for pH Detection |
publishDate |
2023 |
container_title |
International Journal of Nanoelectronics and Materials |
container_volume |
16 |
container_issue |
Special Issue |
doi_str_mv |
10.58915/ijneam.v16iDECEMBER.404 |
url |
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85181674493&doi=10.58915%2fijneam.v16iDECEMBER.404&partnerID=40&md5=dfbc13310d523da694a3ded32ab938cf |
description |
There has been an increasing interest in the development of chemical and biological FET-based sensors due to their remarkable benefits in label-free detection that has been commonly used in both pH and DNA sensing respectively. In this work, recent Double-Gated Field Effect Transistor (DGFET) as transducers is investigated to understand the super-Nernstian response by amplifying the sensitivity capability in back-gate operations. The BioSensorLab tool was employed to evaluate pH-sensitivity amplification by studying the electrolyte screening and conduction modulation mechanisms which modeled by using Poisson-Boltzmann and Drift-Diffusion equations. The pH sensitivity amplification factors were investigated based on different geometrical configurations of DGFET devices, biasing conditions, and top oxide-electrolyte interfaces. pH sensitivity beyond Nernst limit was observed and increased linearly with the back oxide thickness of the DGFETs. DGFET with a sensitivity of 32.1 mV/pH operated through front-gate operation can be amplified to 195.4 mv/pH through the back-gate operation with a drain voltage of 0.5 V when the back gate oxide thickness increased to 150 nm. Higher pH-sensitivity responses of more than 200 mV/pH were observed where Al2O3 and Ta2O5 are used for the top oxide-electrolyte. It can be concluded that pH sensing of back gate operation ensures the DGFET transducers operated beyond the Nernst limit. © 2023, Universiti Malaysia Perlis. All rights reserved. |
publisher |
Universiti Malaysia Perlis |
issn |
19855761 |
language |
English |
format |
Article |
accesstype |
All Open Access; Hybrid Gold Open Access |
record_format |
scopus |
collection |
Scopus |
_version_ |
1809677578260185088 |