The effects of thickness and doping concentration on the solar efficiency of GaN/p-Si based solar cells
In this study, we used the PC1D simulator to demonstrate the performance analysis of a solar cell model based on gallium nitride (GaN). It has been discovered that when the layer thickness of the GaN substrate grows, the efficiency of solar cells decreases. This was found by comparing the doping con...
Published in: | Chalcogenide Letters |
---|---|
Main Author: | Khairuddin N.S.; Mohd Yusoff M.Z.; Hussin H. |
Format: | Article |
Language: | English |
Published: |
S.C. Virtual Company of Phisics S.R.L
2023
|
Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85170252162&doi=10.15251%2fCL.2023.209.629&partnerID=40&md5=9521eb8b96cc3a3e0ea24055849f669b |
Similar Items
-
Simulation and analysis of solar cells based on InN/p-Si: influence on thickness, doping concentration, and temperature dependence
by: Khairuddin N.S.; Yusoff M.Z.M.; Hussin H.; Artes R.G., et al.
Published: (2024) -
Numerical performance analysis of In0.2Ga0.8N/p-Si based solar cell using PC1D simulation on influence of region thicknesses, doping concentration and temperature towards power conversion efficiency (PCE)
by: Khairuddin N.S.; Yusoff M.Z.M.; Hussin H.
Published: (2024) -
Numerical performance analysis of In0.2Ga0.8N/p-Si based solar cell using PC1D simulation on influence of region thicknesses, doping concentration and temperature towards power conversion efficiency (PCE)
by: Khairuddin, et al.
Published: (2024) -
Role of GaN cap layer for reference electrode free AlGaN/GaN-based pH sensors
by: Parish G.; Khir F.L.M.; Krishnan N.R.; Wang J.; Krisjanto J.S.; Li H.; Umana-Membreno G.A.; Keller S.; Mishra U.K.; Baker M.V.; Nener B.D.; Myers M.
Published: (2019) -
Enhanced Breakdown Voltage of AlGaN/GaN MISHEMT using GaN Buffer with Carbon-Doping on Silicon for Power Device
by: Islam N.; Mohamed M.F.P.; Rahman S.F.A.; Syamsul M.; Kawarada H.; Rahim A.F.A.
Published: (2024)