The effects of thickness and doping concentration on the solar efficiency of GaN/p-Si based solar cells
In this study, we used the PC1D simulator to demonstrate the performance analysis of a solar cell model based on gallium nitride (GaN). It has been discovered that when the layer thickness of the GaN substrate grows, the efficiency of solar cells decreases. This was found by comparing the doping con...
| Published in: | Chalcogenide Letters |
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| Main Author: | |
| Format: | Article |
| Language: | English |
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S.C. Virtual Company of Phisics S.R.L
2023
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85170252162&doi=10.15251%2fCL.2023.209.629&partnerID=40&md5=9521eb8b96cc3a3e0ea24055849f669b |
| Summary: | In this study, we used the PC1D simulator to demonstrate the performance analysis of a solar cell model based on gallium nitride (GaN). It has been discovered that when the layer thickness of the GaN substrate grows, the efficiency of solar cells decreases. This was found by comparing the doping concentration and layer thickness on the GaN and silicon substrates. As the thickness of the p-doping Si layer rises, cell efficiency increases just modestly. The optimal doping concentrations for GaN and p-silicon are 1x1018 cm-3 and 1x1017 cm-3, respectively. In compared to other designs, GaN/p-silicon solar cells have the highest efficiency of 25.26%. © 2023, S.C. Virtual Company of Phisics S.R.L. All rights reserved. |
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| ISSN: | 15848663 |
| DOI: | 10.15251/CL.2023.209.629 |