Modelling and Optimization of A Light Trapping Scheme in A Silicon Solar Cell Using Silicon Nitride (SiNx) Anti-Reflective Coating

• Published in: Trends in Sciences
• Main Author: Zambree A.S.; Bermakai M.Y.; Yusoff M.Z.M.
• Format: Article
• Language: English
• Published: Walailak University 2023
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85162966366&doi=10.48048%2ftis.2023.5555&partnerID=40&md5=6a145e20b2da09c5bbcebcdc6f47a99e

Solar cells system has been gaining remarkable attention in the photovoltaic (PV) industry in recent years. Therefore, many people used solar cells in their life. Hence, from time to time, many industries keep improve it to get the best of efficiency of the solar cell. In this work, it presents ray tracing of light trapping (LT) schemes in thin c-Si to enhance broadband light absorption within 300-1,200 nm wavelength region. For the ray tracing simulation, mono c-Si wafer with 100 μm thickness is investigated and solar spectrum (AM1.5G) at normal incidence is used. Random planar and upright pyramid front surface with silicon nitride (SiNx) anti-reflective coatings (ARC) with the difference thicknesses are the LT schemes being studies in this work. The broadband anti-reflective coating can effectively reduce the optical loss and improve the energy efficiency in the solar cells. The optical properties of the thin c-Si are analyzed with incremental LT schemes. Not only that, the current density also calculated from the absorption curve. Optical properties and current density were evaluated to find out the best thickness and refractive index of the silicon nitride (SiNx). The initial simulation results show that the solar cell current density is about 24.81 mA/cm2. A great Jmax enhancement in solar cell was achieved with utilizing the ARC thickness and type of front surface. Among the 6 proposed scheme, the scheme with upright pyramid front surface of 75 nm SiNx ARC thickness realized a good improvement in current density of 41.19 mA/cm2. This leads to Jmax enhancement of 66.02 % when compared to the reference c-Si. © 2023, Walailak University. All rights reserved.