Anodization voltage effect on physical properties of anodic TiO2nanotube arrays film
Titanium dioxide (TiO2) material have received attention due to their performance in optoelectronics especially in light emission diode (LED) devices. The TiO2 nanotubes array (NTAs) film was synthesized by electrochemical anodization method at different anodizing voltages at room temperature. The s...
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American Institute of Physics Inc.
2020
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2-s2.0-85098544321 Azhar N.E.A.; Munirah S.; Rani R.A.; Shuhaimi A.; Malek M.F.; Mamat M.H.; Shariffudin S.S., Sobihana@uitm.edu.my; Rusop M. Anodization voltage effect on physical properties of anodic TiO2nanotube arrays film 2020 AIP Conference Proceedings 2306 10.1063/5.0033167 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85098544321&doi=10.1063%2f5.0033167&partnerID=40&md5=d97497fbef4e3ca265545f59d38a9c19 Titanium dioxide (TiO2) material have received attention due to their performance in optoelectronics especially in light emission diode (LED) devices. The TiO2 nanotubes array (NTAs) film was synthesized by electrochemical anodization method at different anodizing voltages at room temperature. The surface morphology revealed that sample anodized voltage at 35V showed uniformity with a regular porous on top layer of TiO2. The optical band gap of TiO2 NTAs film shows the decrement of band gap with the increment of anodizing voltage. The current-voltage (I-V) characteristic of TiO2 NTAs film shows the ohmic contact behavior. Non-stoichiometric TiO2 resulted from the oxygen deficiency can be applied to explain the n-type semiconductor behavior. Anodizing voltage at 35V is the highest conductivity and lowest band gap for TiO2 NTAs and suitable used for LED devices. © 2020 Author(s). American Institute of Physics Inc. 0094243X English Conference paper All Open Access; Bronze Open Access |
author |
Azhar N.E.A.; Munirah S.; Rani R.A.; Shuhaimi A.; Malek M.F.; Mamat M.H.; Shariffudin S.S. Sobihana@uitm.edu.my; Rusop M. |
spellingShingle |
Azhar N.E.A.; Munirah S.; Rani R.A.; Shuhaimi A.; Malek M.F.; Mamat M.H.; Shariffudin S.S. Sobihana@uitm.edu.my; Rusop M. Anodization voltage effect on physical properties of anodic TiO2nanotube arrays film |
author_facet |
Azhar N.E.A.; Munirah S.; Rani R.A.; Shuhaimi A.; Malek M.F.; Mamat M.H.; Shariffudin S.S. Sobihana@uitm.edu.my; Rusop M. |
author_sort |
Azhar N.E.A.; Munirah S.; Rani R.A.; Shuhaimi A.; Malek M.F.; Mamat M.H.; Shariffudin S.S. |
title |
Anodization voltage effect on physical properties of anodic TiO2nanotube arrays film |
title_short |
Anodization voltage effect on physical properties of anodic TiO2nanotube arrays film |
title_full |
Anodization voltage effect on physical properties of anodic TiO2nanotube arrays film |
title_fullStr |
Anodization voltage effect on physical properties of anodic TiO2nanotube arrays film |
title_full_unstemmed |
Anodization voltage effect on physical properties of anodic TiO2nanotube arrays film |
title_sort |
Anodization voltage effect on physical properties of anodic TiO2nanotube arrays film |
publishDate |
2020 |
container_title |
AIP Conference Proceedings |
container_volume |
2306 |
container_issue |
|
doi_str_mv |
10.1063/5.0033167 |
url |
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85098544321&doi=10.1063%2f5.0033167&partnerID=40&md5=d97497fbef4e3ca265545f59d38a9c19 |
description |
Titanium dioxide (TiO2) material have received attention due to their performance in optoelectronics especially in light emission diode (LED) devices. The TiO2 nanotubes array (NTAs) film was synthesized by electrochemical anodization method at different anodizing voltages at room temperature. The surface morphology revealed that sample anodized voltage at 35V showed uniformity with a regular porous on top layer of TiO2. The optical band gap of TiO2 NTAs film shows the decrement of band gap with the increment of anodizing voltage. The current-voltage (I-V) characteristic of TiO2 NTAs film shows the ohmic contact behavior. Non-stoichiometric TiO2 resulted from the oxygen deficiency can be applied to explain the n-type semiconductor behavior. Anodizing voltage at 35V is the highest conductivity and lowest band gap for TiO2 NTAs and suitable used for LED devices. © 2020 Author(s). |
publisher |
American Institute of Physics Inc. |
issn |
0094243X |
language |
English |
format |
Conference paper |
accesstype |
All Open Access; Bronze Open Access |
record_format |
scopus |
collection |
Scopus |
_version_ |
1809677895317061632 |