Anodization voltage effect on physical properties of anodic TiO2nanotube arrays film

Titanium dioxide (TiO2) material have received attention due to their performance in optoelectronics especially in light emission diode (LED) devices. The TiO2 nanotubes array (NTAs) film was synthesized by electrochemical anodization method at different anodizing voltages at room temperature. The s...

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Published in:AIP Conference Proceedings
Main Authors: Azhar N.E.A.; Munirah S.; Rani R.A.; Shuhaimi A.; Malek M.F.; Mamat M.H.; Shariffudin S.S., Sobihana@uitm.edu.my; Rusop M.
Format: Conference paper
Language:English
Published: American Institute of Physics Inc. 2020
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85098544321&doi=10.1063%2f5.0033167&partnerID=40&md5=d97497fbef4e3ca265545f59d38a9c19
id 2-s2.0-85098544321
spelling 2-s2.0-85098544321
Azhar N.E.A.; Munirah S.; Rani R.A.; Shuhaimi A.; Malek M.F.; Mamat M.H.; Shariffudin S.S., Sobihana@uitm.edu.my; Rusop M.
Anodization voltage effect on physical properties of anodic TiO2nanotube arrays film
2020
AIP Conference Proceedings
2306

10.1063/5.0033167
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85098544321&doi=10.1063%2f5.0033167&partnerID=40&md5=d97497fbef4e3ca265545f59d38a9c19
Titanium dioxide (TiO2) material have received attention due to their performance in optoelectronics especially in light emission diode (LED) devices. The TiO2 nanotubes array (NTAs) film was synthesized by electrochemical anodization method at different anodizing voltages at room temperature. The surface morphology revealed that sample anodized voltage at 35V showed uniformity with a regular porous on top layer of TiO2. The optical band gap of TiO2 NTAs film shows the decrement of band gap with the increment of anodizing voltage. The current-voltage (I-V) characteristic of TiO2 NTAs film shows the ohmic contact behavior. Non-stoichiometric TiO2 resulted from the oxygen deficiency can be applied to explain the n-type semiconductor behavior. Anodizing voltage at 35V is the highest conductivity and lowest band gap for TiO2 NTAs and suitable used for LED devices. © 2020 Author(s).
American Institute of Physics Inc.
0094243X
English
Conference paper
All Open Access; Bronze Open Access
author Azhar N.E.A.; Munirah S.; Rani R.A.; Shuhaimi A.; Malek M.F.; Mamat M.H.; Shariffudin S.S.
Sobihana@uitm.edu.my; Rusop M.
spellingShingle Azhar N.E.A.; Munirah S.; Rani R.A.; Shuhaimi A.; Malek M.F.; Mamat M.H.; Shariffudin S.S.
Sobihana@uitm.edu.my; Rusop M.
Anodization voltage effect on physical properties of anodic TiO2nanotube arrays film
author_facet Azhar N.E.A.; Munirah S.; Rani R.A.; Shuhaimi A.; Malek M.F.; Mamat M.H.; Shariffudin S.S.
Sobihana@uitm.edu.my; Rusop M.
author_sort Azhar N.E.A.; Munirah S.; Rani R.A.; Shuhaimi A.; Malek M.F.; Mamat M.H.; Shariffudin S.S.
title Anodization voltage effect on physical properties of anodic TiO2nanotube arrays film
title_short Anodization voltage effect on physical properties of anodic TiO2nanotube arrays film
title_full Anodization voltage effect on physical properties of anodic TiO2nanotube arrays film
title_fullStr Anodization voltage effect on physical properties of anodic TiO2nanotube arrays film
title_full_unstemmed Anodization voltage effect on physical properties of anodic TiO2nanotube arrays film
title_sort Anodization voltage effect on physical properties of anodic TiO2nanotube arrays film
publishDate 2020
container_title AIP Conference Proceedings
container_volume 2306
container_issue
doi_str_mv 10.1063/5.0033167
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85098544321&doi=10.1063%2f5.0033167&partnerID=40&md5=d97497fbef4e3ca265545f59d38a9c19
description Titanium dioxide (TiO2) material have received attention due to their performance in optoelectronics especially in light emission diode (LED) devices. The TiO2 nanotubes array (NTAs) film was synthesized by electrochemical anodization method at different anodizing voltages at room temperature. The surface morphology revealed that sample anodized voltage at 35V showed uniformity with a regular porous on top layer of TiO2. The optical band gap of TiO2 NTAs film shows the decrement of band gap with the increment of anodizing voltage. The current-voltage (I-V) characteristic of TiO2 NTAs film shows the ohmic contact behavior. Non-stoichiometric TiO2 resulted from the oxygen deficiency can be applied to explain the n-type semiconductor behavior. Anodizing voltage at 35V is the highest conductivity and lowest band gap for TiO2 NTAs and suitable used for LED devices. © 2020 Author(s).
publisher American Institute of Physics Inc.
issn 0094243X
language English
format Conference paper
accesstype All Open Access; Bronze Open Access
record_format scopus
collection Scopus
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