The effect of annealing time on tungsten-doped vanadium dioxide by using sol-gel spin coating method
Vanadium dioxide is a good and attractive material for application of smart window coating and sensor. The main objective of this research is to fabricate and characterize the tungsten doped vanadium dioxide thin films. Sol-gel spin coating method was used because this technique was a good process f...
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Language: | English |
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American Institute of Physics Inc.
2020
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2-s2.0-85098535294 Hashim H.; Mohamed A.S.; Ibrahim M.Y.; Shariffudin S.S.; Sarah M.S.P. The effect of annealing time on tungsten-doped vanadium dioxide by using sol-gel spin coating method 2020 AIP Conference Proceedings 2306 10.1063/5.0032532 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85098535294&doi=10.1063%2f5.0032532&partnerID=40&md5=5cff26c995abbeb4f0c7277734845246 Vanadium dioxide is a good and attractive material for application of smart window coating and sensor. The main objective of this research is to fabricate and characterize the tungsten doped vanadium dioxide thin films. Sol-gel spin coating method was used because this technique was a good process for preparing the pure vanadium dioxide (VO2) thin films. Five samples of tungsten doped VO2 thin films with different annealing times parameter were fabricated on quartz substrates. Isopropanol was used as the precursor that added to the tungsten doped vanadium dioxide. All samples have been characterized for the surface morphology and thickness using field emission scanning electron microscopy (FESEM). While the electrical properties were measured by current-voltage (I-V) measurement system and the optical properties were characterized via ultraviolet-visible (UV-Vis) spectrophotometer. A linear graph shows the effect of absorbance of the tungsten-doped vanadium dioxide. Longer annealing treatment at 5 hours and 550 °C results in a lower resistivity and a higher conductivity which are 0.65 ωm and 1.54 (ωm)-1 respectively. In a conclusion, the effect of different annealing times successfully characterizes electrical properties, optical properties and surface morphology of tungsten-doped vanadium dioxide thin films. © 2020 Author(s). American Institute of Physics Inc. 0094243X English Conference paper All Open Access; Bronze Open Access |
author |
Hashim H.; Mohamed A.S.; Ibrahim M.Y.; Shariffudin S.S.; Sarah M.S.P. |
spellingShingle |
Hashim H.; Mohamed A.S.; Ibrahim M.Y.; Shariffudin S.S.; Sarah M.S.P. The effect of annealing time on tungsten-doped vanadium dioxide by using sol-gel spin coating method |
author_facet |
Hashim H.; Mohamed A.S.; Ibrahim M.Y.; Shariffudin S.S.; Sarah M.S.P. |
author_sort |
Hashim H.; Mohamed A.S.; Ibrahim M.Y.; Shariffudin S.S.; Sarah M.S.P. |
title |
The effect of annealing time on tungsten-doped vanadium dioxide by using sol-gel spin coating method |
title_short |
The effect of annealing time on tungsten-doped vanadium dioxide by using sol-gel spin coating method |
title_full |
The effect of annealing time on tungsten-doped vanadium dioxide by using sol-gel spin coating method |
title_fullStr |
The effect of annealing time on tungsten-doped vanadium dioxide by using sol-gel spin coating method |
title_full_unstemmed |
The effect of annealing time on tungsten-doped vanadium dioxide by using sol-gel spin coating method |
title_sort |
The effect of annealing time on tungsten-doped vanadium dioxide by using sol-gel spin coating method |
publishDate |
2020 |
container_title |
AIP Conference Proceedings |
container_volume |
2306 |
container_issue |
|
doi_str_mv |
10.1063/5.0032532 |
url |
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85098535294&doi=10.1063%2f5.0032532&partnerID=40&md5=5cff26c995abbeb4f0c7277734845246 |
description |
Vanadium dioxide is a good and attractive material for application of smart window coating and sensor. The main objective of this research is to fabricate and characterize the tungsten doped vanadium dioxide thin films. Sol-gel spin coating method was used because this technique was a good process for preparing the pure vanadium dioxide (VO2) thin films. Five samples of tungsten doped VO2 thin films with different annealing times parameter were fabricated on quartz substrates. Isopropanol was used as the precursor that added to the tungsten doped vanadium dioxide. All samples have been characterized for the surface morphology and thickness using field emission scanning electron microscopy (FESEM). While the electrical properties were measured by current-voltage (I-V) measurement system and the optical properties were characterized via ultraviolet-visible (UV-Vis) spectrophotometer. A linear graph shows the effect of absorbance of the tungsten-doped vanadium dioxide. Longer annealing treatment at 5 hours and 550 °C results in a lower resistivity and a higher conductivity which are 0.65 ωm and 1.54 (ωm)-1 respectively. In a conclusion, the effect of different annealing times successfully characterizes electrical properties, optical properties and surface morphology of tungsten-doped vanadium dioxide thin films. © 2020 Author(s). |
publisher |
American Institute of Physics Inc. |
issn |
0094243X |
language |
English |
format |
Conference paper |
accesstype |
All Open Access; Bronze Open Access |
record_format |
scopus |
collection |
Scopus |
_version_ |
1809678481854824448 |