Enhancing Performance of Porous Si-Doped GaN Based MSM Photodetector Using 50 Hz ACPEC
In this work, we report the formation of porous Si-doped GaN films under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The formation of porous Si-doped GaN by the novel ACPEC is performed in the same electrolyte concentration (4% KOH)...
| Published in: | Journal of Physics: Conference Series |
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| Main Author: | |
| Format: | Conference paper |
| Language: | English |
| Published: |
Institute of Physics Publishing
2020
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85086828039&doi=10.1088%2f1742-6596%2f1535%2f1%2f012006&partnerID=40&md5=0c0b4807a4f13d60e80aafec2c4a184f |