Role of Electrolyte Concentration in Enhancing the Physical Properties on TiO2 Nanotube Arrays via Anodization Method

Titanium dioxide (TiO2) material have received attention due to their performance in optoelectronics. The TiO2 nanotube arrays (TNTAs) has gained much attention compared to conventional TiO2 nanoparticles. The formation of TNTAs was synthesized using electrochemical anodization method to investigate...

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Bibliographic Details
Published in:Proceedings of the 2019 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2019
Main Author: Azhar N.E.A.; Shariffudin S.S.; Munirah S.; Rani R.A.; Rusop M.
Format: Conference paper
Language:English
Published: Institute of Electrical and Electronics Engineers Inc. 2019
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85078292172&doi=10.1109%2fRSM46715.2019.8943571&partnerID=40&md5=aefaa9224d29f0f788f671aabba6e8a3
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Summary:Titanium dioxide (TiO2) material have received attention due to their performance in optoelectronics. The TiO2 nanotube arrays (TNTAs) has gained much attention compared to conventional TiO2 nanoparticles. The formation of TNTAs was synthesized using electrochemical anodization method to investigate effect of different electrolyte concentrations (ammonium flouride - NH4F) on physical properties. Surface morphology (FESEM) shows the size of TNTAs become bigger when the electrolyte concentration increased. The changes of electrolyte concentration was affected to the diameters and lengths of the TNTAs sturcture. An excellent interconnectivity wall of nanotubes was achieved by controlling the electrolyte concentration. XRD pattern of the TNTAs revealed that 0.3 wt% of electrolyte concentration is highest crystalline and consisted of anatase phase. The XRD demonstrating that the degree of coverage TNTAs on titanium (Ti) sheet was increased. This pattern same goes with the raman result. This approach is cost-effective in fabricating high quality ordered of TNTAs for optoelectronic application which is in light emitting-diode (LED) devices. © 2019 IEEE.
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DOI:10.1109/RSM46715.2019.8943571