UV photoresponsivity of sol-gel derived Al-doped ZnO nanorod array

Ultraviolet (UV) photoconductive sensor were fabricated based on aluminum (Al) doped zinc oxide (ZnO) nanorod arrays at different doping concentrations varied from 0 at.% (undoped) to 2 at.% which were deposited on glass substrates using immersion method. The average diameter of nanorods decreased w...

Full description

Bibliographic Details
Published in:AIP Conference Proceedings
Main Author: Ismail A.S.; Mamat M.H.; Malek M.F.; Abdullah M.A.R.; Ahmad W.R.W.; Yusoff M.M.; Mohamed R.; Md Sin N.D.; Suriani A.B.; Rusop M.
Format: Conference paper
Language:English
Published: American Institute of Physics Inc. 2019
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85072111071&doi=10.1063%2f1.5124637&partnerID=40&md5=f77e3c91900891a4bad75659e968070a
Description
Summary:Ultraviolet (UV) photoconductive sensor were fabricated based on aluminum (Al) doped zinc oxide (ZnO) nanorod arrays at different doping concentrations varied from 0 at.% (undoped) to 2 at.% which were deposited on glass substrates using immersion method. The average diameter of nanorods decreased with increased of Al doping concentration. The transmittance of all samples is above 70% in the visible regions. The electrical properties were improved by dopant concentrations as shown by I-V measurement results. UV responsivity and sensitivity of 0.8 at.% Al doping concentration is the highest compared to other samples with value of 8.81 A/W and 51.67, respectively. © 2019 Author(s).
ISSN:0094243X
DOI:10.1063/1.5124637