2018 IEEE International conference on semiconductor electronics (ICSE) synthesis, properties and humidity detection of anodized Nb2O5 films
Synthesis of nanoporous network Nb2O5has been conducted via anodization technique in the flouride-organic based solution. The structure morphology and the properties of the nanoporous films were characterized using field emission scanning electron microscopy (FESEM). In this research, a humidity sen...
Published in: | IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE |
---|---|
Main Author: | |
Format: | Conference paper |
Language: | English |
Published: |
Institute of Electrical and Electronics Engineers Inc.
2018
|
Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85056271343&doi=10.1109%2fSMELEC.2018.8481330&partnerID=40&md5=54490614a0a3c649c89cb806b2efaff9 |
id |
2-s2.0-85056271343 |
---|---|
spelling |
2-s2.0-85056271343 Rani R.A.; Zoolfakar A.S.; Ryeeshyam M.F.M.; Azhar N.E.A.; Mamat M.H.; Alrokavan S.; Khan H.A.; Mahmood M.R. 2018 IEEE International conference on semiconductor electronics (ICSE) synthesis, properties and humidity detection of anodized Nb2O5 films 2018 IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE 2018-August 10.1109/SMELEC.2018.8481330 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85056271343&doi=10.1109%2fSMELEC.2018.8481330&partnerID=40&md5=54490614a0a3c649c89cb806b2efaff9 Synthesis of nanoporous network Nb2O5has been conducted via anodization technique in the flouride-organic based solution. The structure morphology and the properties of the nanoporous films were characterized using field emission scanning electron microscopy (FESEM). In this research, a humidity sensor based on 1.5 micrometer thick nanoporous Nb2O5was developed and their performance was evaluated under 40% to 90% relative humidity at room temperature and different bias voltages of 2, 5 and 8 V. The highest relative sensitivity achieved was 156.2 for humidity sensor operated at bias voltage of 5 V. © 2018 IEEE. Institute of Electrical and Electronics Engineers Inc. English Conference paper |
author |
Rani R.A.; Zoolfakar A.S.; Ryeeshyam M.F.M.; Azhar N.E.A.; Mamat M.H.; Alrokavan S.; Khan H.A.; Mahmood M.R. |
spellingShingle |
Rani R.A.; Zoolfakar A.S.; Ryeeshyam M.F.M.; Azhar N.E.A.; Mamat M.H.; Alrokavan S.; Khan H.A.; Mahmood M.R. 2018 IEEE International conference on semiconductor electronics (ICSE) synthesis, properties and humidity detection of anodized Nb2O5 films |
author_facet |
Rani R.A.; Zoolfakar A.S.; Ryeeshyam M.F.M.; Azhar N.E.A.; Mamat M.H.; Alrokavan S.; Khan H.A.; Mahmood M.R. |
author_sort |
Rani R.A.; Zoolfakar A.S.; Ryeeshyam M.F.M.; Azhar N.E.A.; Mamat M.H.; Alrokavan S.; Khan H.A.; Mahmood M.R. |
title |
2018 IEEE International conference on semiconductor electronics (ICSE) synthesis, properties and humidity detection of anodized Nb2O5 films |
title_short |
2018 IEEE International conference on semiconductor electronics (ICSE) synthesis, properties and humidity detection of anodized Nb2O5 films |
title_full |
2018 IEEE International conference on semiconductor electronics (ICSE) synthesis, properties and humidity detection of anodized Nb2O5 films |
title_fullStr |
2018 IEEE International conference on semiconductor electronics (ICSE) synthesis, properties and humidity detection of anodized Nb2O5 films |
title_full_unstemmed |
2018 IEEE International conference on semiconductor electronics (ICSE) synthesis, properties and humidity detection of anodized Nb2O5 films |
title_sort |
2018 IEEE International conference on semiconductor electronics (ICSE) synthesis, properties and humidity detection of anodized Nb2O5 films |
publishDate |
2018 |
container_title |
IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE |
container_volume |
2018-August |
container_issue |
|
doi_str_mv |
10.1109/SMELEC.2018.8481330 |
url |
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85056271343&doi=10.1109%2fSMELEC.2018.8481330&partnerID=40&md5=54490614a0a3c649c89cb806b2efaff9 |
description |
Synthesis of nanoporous network Nb2O5has been conducted via anodization technique in the flouride-organic based solution. The structure morphology and the properties of the nanoporous films were characterized using field emission scanning electron microscopy (FESEM). In this research, a humidity sensor based on 1.5 micrometer thick nanoporous Nb2O5was developed and their performance was evaluated under 40% to 90% relative humidity at room temperature and different bias voltages of 2, 5 and 8 V. The highest relative sensitivity achieved was 156.2 for humidity sensor operated at bias voltage of 5 V. © 2018 IEEE. |
publisher |
Institute of Electrical and Electronics Engineers Inc. |
issn |
|
language |
English |
format |
Conference paper |
accesstype |
|
record_format |
scopus |
collection |
Scopus |
_version_ |
1809677602662645760 |