Platinum (Pt) doped Nb2O5 for enhancing ultraviolet photodetector

• Published in: IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
• Main Author: Anas M.; Basir A.; Manut A.; Mamat M.H.; Kadir R.A.; Zoolfakar A.S.; Rani R.A.; Rusop M.
• Format: Conference paper
• Language: English
• Published: Institute of Electrical and Electronics Engineers Inc. 2018
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85056262690&doi=10.1109%2fSMELEC.2018.8481304&partnerID=40&md5=4ad0bd3c764a612668b079265d002bd0
• DOI: 10.1109/SMELEC.2018.8481304

This work presents the development of Ultraviolet (UV) Photodetector based on platinum doped niobium oxide (Nb2O5) for enhancing UV Photodetector performance. The anodization duration was varied by using Ethylene Glycol and Ammonium Fluoride and observed by UV radiation with different voltage supply. The morphology of Nb2O5nanoporous was characterized by using FESEM. Metal contact with 30 nm thickness of platinum was used using Thermal Evaporator process. Different duration of anodized produces different sizes of nanoporous diameter that affected UV performance. Lastly, I-V characteristic was used to record the reading of UV performance for every sample substrate. The thinner the thickness of the substrate, the higher the performance of UV characterized. © 2018 IEEE.