Facile synthesis of N-doped ZnO nanorod arrays: Towards enhancing the UV-sensing performance

Nitrogen (N) doped zinc oxide (ZnO) nanorod arrays at different doping concentrations from 0 at.% (undoped) to 2 at. % have been prepared using sol-gel immerse method. FESEM images revealed that the average diameter increased when the concentration of N in ZnO increased. The 1-V measurement displaye...

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Published in:IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Main Author: Ismail A.S.; Mamat M.H.; Malek M.F.; Azhar N.E.A.; Sulimai N.H.; Rani R.A.; Zoolfakar A.S.; Rusop M.
Format: Conference paper
Language:English
Published: Institute of Electrical and Electronics Engineers Inc. 2018
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85056260725&doi=10.1109%2fSMELEC.2018.8481321&partnerID=40&md5=de620ae1e79e36f47e315971a1c2880b
id 2-s2.0-85056260725
spelling 2-s2.0-85056260725
Ismail A.S.; Mamat M.H.; Malek M.F.; Azhar N.E.A.; Sulimai N.H.; Rani R.A.; Zoolfakar A.S.; Rusop M.
Facile synthesis of N-doped ZnO nanorod arrays: Towards enhancing the UV-sensing performance
2018
IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
2018-August

10.1109/SMELEC.2018.8481321
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85056260725&doi=10.1109%2fSMELEC.2018.8481321&partnerID=40&md5=de620ae1e79e36f47e315971a1c2880b
Nitrogen (N) doped zinc oxide (ZnO) nanorod arrays at different doping concentrations from 0 at.% (undoped) to 2 at. % have been prepared using sol-gel immerse method. FESEM images revealed that the average diameter increased when the concentration of N in ZnO increased. The 1-V measurement displayed that 1 at. % sample possessed the lowest resistance film and exhibit the highest UV sensing performance with sensitivity of 12.9. © 2018 IEEE.
Institute of Electrical and Electronics Engineers Inc.

English
Conference paper

author Ismail A.S.; Mamat M.H.; Malek M.F.; Azhar N.E.A.; Sulimai N.H.; Rani R.A.; Zoolfakar A.S.; Rusop M.
spellingShingle Ismail A.S.; Mamat M.H.; Malek M.F.; Azhar N.E.A.; Sulimai N.H.; Rani R.A.; Zoolfakar A.S.; Rusop M.
Facile synthesis of N-doped ZnO nanorod arrays: Towards enhancing the UV-sensing performance
author_facet Ismail A.S.; Mamat M.H.; Malek M.F.; Azhar N.E.A.; Sulimai N.H.; Rani R.A.; Zoolfakar A.S.; Rusop M.
author_sort Ismail A.S.; Mamat M.H.; Malek M.F.; Azhar N.E.A.; Sulimai N.H.; Rani R.A.; Zoolfakar A.S.; Rusop M.
title Facile synthesis of N-doped ZnO nanorod arrays: Towards enhancing the UV-sensing performance
title_short Facile synthesis of N-doped ZnO nanorod arrays: Towards enhancing the UV-sensing performance
title_full Facile synthesis of N-doped ZnO nanorod arrays: Towards enhancing the UV-sensing performance
title_fullStr Facile synthesis of N-doped ZnO nanorod arrays: Towards enhancing the UV-sensing performance
title_full_unstemmed Facile synthesis of N-doped ZnO nanorod arrays: Towards enhancing the UV-sensing performance
title_sort Facile synthesis of N-doped ZnO nanorod arrays: Towards enhancing the UV-sensing performance
publishDate 2018
container_title IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
container_volume 2018-August
container_issue
doi_str_mv 10.1109/SMELEC.2018.8481321
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85056260725&doi=10.1109%2fSMELEC.2018.8481321&partnerID=40&md5=de620ae1e79e36f47e315971a1c2880b
description Nitrogen (N) doped zinc oxide (ZnO) nanorod arrays at different doping concentrations from 0 at.% (undoped) to 2 at. % have been prepared using sol-gel immerse method. FESEM images revealed that the average diameter increased when the concentration of N in ZnO increased. The 1-V measurement displayed that 1 at. % sample possessed the lowest resistance film and exhibit the highest UV sensing performance with sensitivity of 12.9. © 2018 IEEE.
publisher Institute of Electrical and Electronics Engineers Inc.
issn
language English
format Conference paper
accesstype
record_format scopus
collection Scopus
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