Facile synthesis of N-doped ZnO nanorod arrays: Towards enhancing the UV-sensing performance
Nitrogen (N) doped zinc oxide (ZnO) nanorod arrays at different doping concentrations from 0 at.% (undoped) to 2 at. % have been prepared using sol-gel immerse method. FESEM images revealed that the average diameter increased when the concentration of N in ZnO increased. The 1-V measurement displaye...
| Published in: | IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE |
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| Main Author: | |
| Format: | Conference paper |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2018
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85056260725&doi=10.1109%2fSMELEC.2018.8481321&partnerID=40&md5=de620ae1e79e36f47e315971a1c2880b |
| Summary: | Nitrogen (N) doped zinc oxide (ZnO) nanorod arrays at different doping concentrations from 0 at.% (undoped) to 2 at. % have been prepared using sol-gel immerse method. FESEM images revealed that the average diameter increased when the concentration of N in ZnO increased. The 1-V measurement displayed that 1 at. % sample possessed the lowest resistance film and exhibit the highest UV sensing performance with sensitivity of 12.9. © 2018 IEEE. |
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| ISSN: | |
| DOI: | 10.1109/SMELEC.2018.8481321 |