Fabrication of p-type Organic Field Effect Transistor using PMMA:TiO2 as Nanocomposite Dielectric Layer

Fabrication of p-type Organic Field Effect Transistor using PMMA:TiO2 as Nanocomposite Dielectric Layer

This paper report on the fabrication of p-type organic field effects transistor (OFET) using low temperature spin coating deposition technique. The p-type OFETs were fabricated using poly (3-hexylthiophene-2,5-diyl) (P3HT) and poly (methyl methacrylate):titanium dioxide (PMMA:TiO2) nanocomposite mat...

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Published in:IOP Conference Series: Materials Science and Engineering
Main Author: Ismail L.N.; Samsul S.; Musa M.Z.; Norsabrina S.
Format: Conference paper
Language:English
Published: Institute of Physics Publishing 2018
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85046418142&doi=10.1088%2f1757-899X%2f340%2f1%2f012005&partnerID=40&md5=2ab11b082d3bab339e7a93a4bf0b169f
id 2-s2.0-85046418142
spelling 2-s2.0-85046418142
Ismail L.N.; Samsul S.; Musa M.Z.; Norsabrina S.
Fabrication of p-type Organic Field Effect Transistor using PMMA:TiO2 as Nanocomposite Dielectric Layer
2018
IOP Conference Series: Materials Science and Engineering
340
1
10.1088/1757-899X/340/1/012005
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85046418142&doi=10.1088%2f1757-899X%2f340%2f1%2f012005&partnerID=40&md5=2ab11b082d3bab339e7a93a4bf0b169f
This paper report on the fabrication of p-type organic field effects transistor (OFET) using low temperature spin coating deposition technique. The p-type OFETs were fabricated using poly (3-hexylthiophene-2,5-diyl) (P3HT) and poly (methyl methacrylate):titanium dioxide (PMMA:TiO2) nanocomposite material were used as semiconductor and the gate dielectric, respectively. The electrical and structural properties of OFETs were analysed using current-voltage (I-V), atomic force microscopy (AFM) and RAMAN spectroscopy. Results from I-V show that the fabricated p-type OFET has moderate performance with threshold voltage, VTH is -3V and mobility, μ is 2.01 cm2 V-1s. © Published under licence by IOP Publishing Ltd.
Institute of Physics Publishing
17578981
English
Conference paper
All Open Access; Gold Open Access
author Ismail L.N.; Samsul S.; Musa M.Z.; Norsabrina S.
spellingShingle Ismail L.N.; Samsul S.; Musa M.Z.; Norsabrina S.
Fabrication of p-type Organic Field Effect Transistor using PMMA:TiO2 as Nanocomposite Dielectric Layer
author_facet Ismail L.N.; Samsul S.; Musa M.Z.; Norsabrina S.
author_sort Ismail L.N.; Samsul S.; Musa M.Z.; Norsabrina S.
title Fabrication of p-type Organic Field Effect Transistor using PMMA:TiO2 as Nanocomposite Dielectric Layer
title_short Fabrication of p-type Organic Field Effect Transistor using PMMA:TiO2 as Nanocomposite Dielectric Layer
title_full Fabrication of p-type Organic Field Effect Transistor using PMMA:TiO2 as Nanocomposite Dielectric Layer
title_fullStr Fabrication of p-type Organic Field Effect Transistor using PMMA:TiO2 as Nanocomposite Dielectric Layer
title_full_unstemmed Fabrication of p-type Organic Field Effect Transistor using PMMA:TiO2 as Nanocomposite Dielectric Layer
title_sort Fabrication of p-type Organic Field Effect Transistor using PMMA:TiO2 as Nanocomposite Dielectric Layer
publishDate 2018
container_title IOP Conference Series: Materials Science and Engineering
container_volume 340
container_issue 1
doi_str_mv 10.1088/1757-899X/340/1/012005
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85046418142&doi=10.1088%2f1757-899X%2f340%2f1%2f012005&partnerID=40&md5=2ab11b082d3bab339e7a93a4bf0b169f
description This paper report on the fabrication of p-type organic field effects transistor (OFET) using low temperature spin coating deposition technique. The p-type OFETs were fabricated using poly (3-hexylthiophene-2,5-diyl) (P3HT) and poly (methyl methacrylate):titanium dioxide (PMMA:TiO2) nanocomposite material were used as semiconductor and the gate dielectric, respectively. The electrical and structural properties of OFETs were analysed using current-voltage (I-V), atomic force microscopy (AFM) and RAMAN spectroscopy. Results from I-V show that the fabricated p-type OFET has moderate performance with threshold voltage, VTH is -3V and mobility, μ is 2.01 cm2 V-1s. © Published under licence by IOP Publishing Ltd.
publisher Institute of Physics Publishing
issn 17578981
language English
format Conference paper
accesstype All Open Access; Gold Open Access
record_format scopus
collection Scopus
_version_ 1809678160519757824

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