Fabrication of p-type Organic Field Effect Transistor using PMMA:TiO2 as Nanocomposite Dielectric Layer
This paper report on the fabrication of p-type organic field effects transistor (OFET) using low temperature spin coating deposition technique. The p-type OFETs were fabricated using poly (3-hexylthiophene-2,5-diyl) (P3HT) and poly (methyl methacrylate):titanium dioxide (PMMA:TiO2) nanocomposite mat...
| Published in: | IOP Conference Series: Materials Science and Engineering |
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| Main Author: | |
| Format: | Conference paper |
| Language: | English |
| Published: |
Institute of Physics Publishing
2018
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85046418142&doi=10.1088%2f1757-899X%2f340%2f1%2f012005&partnerID=40&md5=2ab11b082d3bab339e7a93a4bf0b169f |
| Summary: | This paper report on the fabrication of p-type organic field effects transistor (OFET) using low temperature spin coating deposition technique. The p-type OFETs were fabricated using poly (3-hexylthiophene-2,5-diyl) (P3HT) and poly (methyl methacrylate):titanium dioxide (PMMA:TiO2) nanocomposite material were used as semiconductor and the gate dielectric, respectively. The electrical and structural properties of OFETs were analysed using current-voltage (I-V), atomic force microscopy (AFM) and RAMAN spectroscopy. Results from I-V show that the fabricated p-type OFET has moderate performance with threshold voltage, VTH is -3V and mobility, μ is 2.01 cm2 V-1s. © Published under licence by IOP Publishing Ltd. |
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| ISSN: | 17578981 |
| DOI: | 10.1088/1757-899X/340/1/012005 |